Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes

Prudhvi Ram Peri, Kevin Hatch, Daniel Messina, Kai Fu, Yuji Zhao, Robert Nemanich, David Smith

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Pages (from-to)	840-842
Number of pages	3
Journal	Microscopy and Microanalysis
DOIs	https://doi.org/10.1017/S1431927620016049
State	Accepted/In press - 2020

ASJC Scopus subject areas

@article{e50c8eb5b143478f99bced48f0d1bebd,

title = "Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes",

author = "Peri, {Prudhvi Ram} and Kevin Hatch and Daniel Messina and Kai Fu and Yuji Zhao and Robert Nemanich and David Smith",

year = "2020",

doi = "10.1017/S1431927620016049",

language = "English (US)",

pages = "840--842",

journal = "Microscopy and Microanalysis",

issn = "1431-9276",

publisher = "Cambridge University Press",

}

TY - JOUR

T1 - Plasma Enhanced Atomic Layer-etched and Regrown GaN-on-GaN High Power p-n Diodes

AU - Peri, Prudhvi Ram

AU - Hatch, Kevin

AU - Messina, Daniel

AU - Fu, Kai

AU - Zhao, Yuji

AU - Nemanich, Robert

AU - Smith, David

PY - 2020

Y1 - 2020

UR - http://www.scopus.com/inward/record.url?scp=85099510981&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85099510981&partnerID=8YFLogxK

U2 - 10.1017/S1431927620016049

DO - 10.1017/S1431927620016049

M3 - Comment/debate

AN - SCOPUS:85099510981

SN - 1431-9276

SP - 840

EP - 842

JO - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

ER -