Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium

Engineering & Materials Science

• Atomic layer deposition 100%
• Gallium 92%
• Etching 70%
• Plasmas 60%
• Oxides 56%
• Substrates 13%
• Ligands 12%
• Atomic force microscopy 11%
• Photons 11%
• Chemical sensors 10%
• Solar cells 9%
• Surface treatment 9%
• Hot Temperature 8%
• Power electronics 8%
• Vapors 8%
• Surface roughness 7%
• Temperature 7%
• Detectors 7%

Physics & Astronomy

• gallium oxides 83%
• atomic layer epitaxy 67%
• etching 49%
• machining 9%
• gallium 9%
• ligands 9%
• fluorides 9%
• surface layers 8%
• surface roughness 7%
• vapor phases 7%
• atomic force microscopy 7%
• solar cells 6%
• damage 6%
• saturation 6%
• cycles 6%
• products 5%
• sensors 5%
• temperature 5%
• photons 5%
• detectors 5%
• electronics 4%
• gases 4%

Chemical Compounds

• Atomic Layer Epitaxy 75%
• Etching 58%
• Plasma 40%
• Oxide 35%
• Gas Sensor 9%
• Surface Roughness 9%
• Photon 8%
• Solar Cell 8%
• Surface Modification 8%
• Fluoride 7%
• Atomic Force Microscopy 7%
• Amorphous Material 6%
• Ligand 4%
• Surface 2%
• Application 2%