Piezoresponse force microscopy for polarity imaging of GaN

B. J. Rodriguez, A. Gruverman, A. I. Kingon, R. J. Nemanich, O. Ambacher

Research output: Contribution to journalArticle

71 Scopus citations

Abstract

The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution.

Original languageEnglish (US)
Pages (from-to)4166-4168
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number22
DOIs
StatePublished - Jun 3 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Piezoresponse force microscopy for polarity imaging of GaN'. Together they form a unique fingerprint.

  • Cite this

    Rodriguez, B. J., Gruverman, A., Kingon, A. I., Nemanich, R. J., & Ambacher, O. (2002). Piezoresponse force microscopy for polarity imaging of GaN. Applied Physics Letters, 80(22), 4166-4168. https://doi.org/10.1063/1.1483117