Piezoresponse force microscopy for polarity imaging of GaN

B. J. Rodriguez; A. Gruverman; A. I. Kingon; R. J. Nemanich; O. Ambacher

doi:10.1063/1.1483117

Piezoresponse force microscopy for polarity imaging of GaN

B. J. Rodriguez, A. Gruverman, A. I. Kingon, R. J. Nemanich, O. Ambacher

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al₂O₃ substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution.

Original language	English (US)
Pages (from-to)	4166-4168
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	22
DOIs	https://doi.org/10.1063/1.1483117
State	Published - Jun 3 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution.",

author = "Rodriguez, {B. J.} and A. Gruverman and Kingon, {A. I.} and Nemanich, {R. J.} and O. Ambacher",

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AU - Rodriguez, B. J.

AU - Gruverman, A.

AU - Kingon, A. I.

AU - Nemanich, R. J.

AU - Ambacher, O.

PY - 2002/6/3

Y1 - 2002/6/3

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AB - The polarity distribution of GaN based lateral polarity heterostructures is investigated by piezoresponse force microscopy (PFM). Simultaneous imaging of surface morphology, as well as the phase and magnitude of the piezoelectric response, is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution.

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Piezoresponse force microscopy for polarity imaging of GaN

Abstract

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