TY - JOUR
T1 - Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials
AU - Rodriguez, B. J.
AU - Gruverman, A.
AU - Kingon, A. I.
AU - Nemanich, R. J.
N1 - Funding Information:
The authors gratefully acknowledge Drs. O. Ambacher and R. Dimitrov for providing GaN based lateral polarity heterostructures, Dr. V. Lebedev for providing an AlN/Si thin film with mixed polarity, and Drs. R. Davis and P. Miraglia for providing OMVPE samples. This research is supported by the Office of Naval Research MURI on Polarization Electronics Contract No. N00014-99-1-0729.
PY - 2002/12/16
Y1 - 2002/12/16
N2 - Piezoelectric constants and polarity distributions of epitaxial AlN and GaN thin films are investigated by piezoresponse force microscopy (PFM). The magnitude of the effective longitudinal piezoelectric constant d33 is determined to be 3 ± 1 and 2 ± 1 pm/V for wurtzite AlN and GaN/AlN layers grown by organo-metallic vapor phase epitaxy on SiC substrates, respectively. Simultaneous imaging of surface morphology as well as the phase and magnitude of the piezoelectric response is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution. We also present images of AlN/Si samples with regions of opposite piezoresponse phase, which indicate the presence of antiphase domains. We discuss the potential application of this technique for determination of the orientation of bulk crystals.
AB - Piezoelectric constants and polarity distributions of epitaxial AlN and GaN thin films are investigated by piezoresponse force microscopy (PFM). The magnitude of the effective longitudinal piezoelectric constant d33 is determined to be 3 ± 1 and 2 ± 1 pm/V for wurtzite AlN and GaN/AlN layers grown by organo-metallic vapor phase epitaxy on SiC substrates, respectively. Simultaneous imaging of surface morphology as well as the phase and magnitude of the piezoelectric response is performed by PFM on a GaN film with patterned polarities on a c-Al2O3 substrate. We demonstrate that the polarity distribution of GaN based lateral polarity heterostructures can be deduced from the phase image of the piezoresponse with nanometer scale spatial resolution. We also present images of AlN/Si samples with regions of opposite piezoresponse phase, which indicate the presence of antiphase domains. We discuss the potential application of this technique for determination of the orientation of bulk crystals.
KW - A1. Atomic force microscopy
KW - B2. Piezoelectric materials
KW - B2. Semiconducting III-V materials
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U2 - 10.1016/S0022-0248(02)01749-9
DO - 10.1016/S0022-0248(02)01749-9
M3 - Conference article
AN - SCOPUS:0037121636
SN - 0022-0248
VL - 246
SP - 252
EP - 258
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 3-4
T2 - BNS 2002
Y2 - 18 May 2002 through 23 May 2002
ER -