Picosecond time-resolved Raman studies of the expansion of the electron-hole plasma in Si

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The lateral expansion of photoexcited electron-hole plasma in Si is examined by picosecond time-resolved Raman scattering. The experimental results are consistent with the conclusion reached on a longer (nanosecond) time scale by Steranka et al., and show that at T=35 K, electron-hole plasma with n3×1018 cm-3 expands laterally at below sonic velocities on the 100-ps to 10-ns time scale.

Original languageEnglish (US)
Pages (from-to)4134-4136
Number of pages3
JournalPhysical Review B
Issue number8
Publication statusPublished - 1987


ASJC Scopus subject areas

  • Condensed Matter Physics

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