Picosecond time-resolved Raman studies of electron-optical phonon interactions in ultrathin GaAs-AlAs multiple quantum well structures

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Abstract

Electron-optical phonon interactions in ultrathin GaAs-AlAs multiple quantum well structures have been studied by using picosecond time-resolved Raman spectroscopy. The authors experimental results have shown that the electrons primarily relax through the emission of interface optical phonons and that the electrons interact not only with GaAs-like interface phonons but also with AlAs-like interface phonons. The interaction strength of electrons with AlAs-like interface phonons has been shown to be much stronger than that of electrons with GaAs-like interface phonons for ultrathin GaAs quantum wells. The strength of electron-AlAs-like interface phonon interaction has been demonstrated to decrease very rapidly as the thickness of the GaAs well increases.

Original languageEnglish (US)
Article number047
Pages (from-to)B191-B194
JournalSemiconductor Science and Technology
Volume7
Issue number3 B
DOIs
StatePublished - Dec 1 1992

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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