Abstract
Picosecond time-resolved Raman scattering has been used to investigate the properties of the GaAs-like and AlAs-like longitudinal-optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. The experimental results have shown that the phonon lifetimes are the same as in bulk AlxGa1-xAs and therefore have demonstrated that phonon zone folding caused by the additional periodicity of the lattice has little effect on the lifetimes of these barrier-confined LO phonons. The generation efficiency of these LO phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures has been shown to be the same as in bulk AlxGa1-xAs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7137-7139 |
| Number of pages | 3 |
| Journal | Physical Review B |
| Volume | 37 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1988 |
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ASJC Scopus subject areas
- Condensed Matter Physics
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Picosecond Raman studies of the optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. / Tsen, Kong-Thon; Morkoç, H.
In: Physical Review B, Vol. 37, No. 12, 1988, p. 7137-7139.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Picosecond Raman studies of the optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures
AU - Tsen, Kong-Thon
AU - Morkoç, H.
PY - 1988
Y1 - 1988
N2 - Picosecond time-resolved Raman scattering has been used to investigate the properties of the GaAs-like and AlAs-like longitudinal-optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. The experimental results have shown that the phonon lifetimes are the same as in bulk AlxGa1-xAs and therefore have demonstrated that phonon zone folding caused by the additional periodicity of the lattice has little effect on the lifetimes of these barrier-confined LO phonons. The generation efficiency of these LO phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures has been shown to be the same as in bulk AlxGa1-xAs.
AB - Picosecond time-resolved Raman scattering has been used to investigate the properties of the GaAs-like and AlAs-like longitudinal-optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. The experimental results have shown that the phonon lifetimes are the same as in bulk AlxGa1-xAs and therefore have demonstrated that phonon zone folding caused by the additional periodicity of the lattice has little effect on the lifetimes of these barrier-confined LO phonons. The generation efficiency of these LO phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures has been shown to be the same as in bulk AlxGa1-xAs.
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U2 - 10.1103/PhysRevB.37.7137
DO - 10.1103/PhysRevB.37.7137
M3 - Article
AN - SCOPUS:0009484797
VL - 37
SP - 7137
EP - 7139
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 12
ER -