Picosecond Raman studies of the optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures

Kong-Thon Tsen, H. Morkoç

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Abstract

Picosecond time-resolved Raman scattering has been used to investigate the properties of the GaAs-like and AlAs-like longitudinal-optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. The experimental results have shown that the phonon lifetimes are the same as in bulk AlxGa1-xAs and therefore have demonstrated that phonon zone folding caused by the additional periodicity of the lattice has little effect on the lifetimes of these barrier-confined LO phonons. The generation efficiency of these LO phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures has been shown to be the same as in bulk AlxGa1-xAs.

Original languageEnglish (US)
Pages (from-to)7137-7139
Number of pages3
JournalPhysical Review B
Volume37
Issue number12
DOIs
StatePublished - Jan 1 1988

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ASJC Scopus subject areas

  • Condensed Matter Physics

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