Abstract
Picosecond time-resolved Raman scattering has been used to investigate the properties of the GaAs-like and AlAs-like longitudinal-optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. The experimental results have shown that the phonon lifetimes are the same as in bulk AlxGa1-xAs and therefore have demonstrated that phonon zone folding caused by the additional periodicity of the lattice has little effect on the lifetimes of these barrier-confined LO phonons. The generation efficiency of these LO phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures has been shown to be the same as in bulk AlxGa1-xAs.
Original language | English (US) |
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Pages (from-to) | 7137-7139 |
Number of pages | 3 |
Journal | Physical Review B |
Volume | 37 |
Issue number | 12 |
DOIs | |
State | Published - Jan 1 1988 |
ASJC Scopus subject areas
- Condensed Matter Physics