Picosecond Raman studies of the optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures

Kong-Thon Tsen, H. Morkoç

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Picosecond time-resolved Raman scattering has been used to investigate the properties of the GaAs-like and AlAs-like longitudinal-optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. The experimental results have shown that the phonon lifetimes are the same as in bulk AlxGa1-xAs and therefore have demonstrated that phonon zone folding caused by the additional periodicity of the lattice has little effect on the lifetimes of these barrier-confined LO phonons. The generation efficiency of these LO phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures has been shown to be the same as in bulk AlxGa1-xAs.

Original languageEnglish (US)
Pages (from-to)7137-7139
Number of pages3
JournalPhysical Review B
Volume37
Issue number12
DOIs
StatePublished - 1988

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Phonons
Semiconductor quantum wells
phonons
quantum wells
life (durability)
folding
Raman scattering
periodic variations
Raman spectra
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Picosecond Raman studies of the optical phonons in the AlxGa1-xAs layers of GaAs-AlxGa1-xAs multiple-quantum-well structures. / Tsen, Kong-Thon; Morkoç, H.

In: Physical Review B, Vol. 37, No. 12, 1988, p. 7137-7139.

Research output: Contribution to journalArticle

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