Picosecond Raman studies of field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure

Y. Chen, Kong-Thon Tsen, O. F. Sankey, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

Abstract

Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300 K. Our experimental results demonstrate that at T = 300 K, for a 5-ps excitation laser pulse and a hole density of nh ≅ 5 × 1017 cm-3, transient hole drift velocity increases from zero to ≅(3±0.7) × 106 cm/s when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅(8±0.8) × 106 cm/s for the applied electric field intensity of E≥25 kV/cm and up to 65 kV/cm.

Original languageEnglish (US)
Pages (from-to)278-282
Number of pages5
JournalPhysica B: Condensed Matter
Volume314
Issue number1-4
DOIs
StatePublished - Mar 2002

Keywords

  • AlGaAs
  • Hole transport
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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