Electric field-induced transient hole transport in an Al0.3Ga0.7As-based p-i-n nanostructure has been studied by picosecond Raman spectroscopy at T = 300 K. Our experimental results demonstrate that at T = 300 K, for a 5-ps excitation laser pulse and a hole density of nh ≅ 5 × 1017 cm-3, transient hole drift velocity increases from zero to ≅(3±0.7) × 106 cm/s when the applied electric field intensity increases from E = 0 to 15 kV/cm. The transient hole drift velocity then becomes saturated at ≅(8±0.8) × 106 cm/s for the applied electric field intensity of E≥25 kV/cm and up to 65 kV/cm.
- Hole transport
- Raman spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering