Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

Kong-Thon Tsen; D. K. Ferry; A. Botchkarev; B. Sverdlov; A. Salvador; H. Morkoc

Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

Kong-Thon Tsen, D. K. Ferry, A. Botchkarev, B. Sverdlov, A. Salvador, H. Morkoc

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy hω = 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. We have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. Our work demonstrates that the Frohlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	565-569
Number of pages	5
Volume	395
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

Other

Other	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	11/26/95 → 12/1/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{0dc79faa4da1406c90d7e7c0e934f0bb,

title = "Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN",

abstract = "Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy hω = 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. We have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. Our work demonstrates that the Frohlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.",

author = "Kong-Thon Tsen and Ferry, {D. K.} and A. Botchkarev and B. Sverdlov and A. Salvador and H. Morkoc",

year = "1996",

language = "English (US)",

volume = "395",

pages = "565--569",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - GEN

T1 - Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Botchkarev, A.

AU - Sverdlov, B.

AU - Salvador, A.

AU - Morkoc, H.

PY - 1996

Y1 - 1996

N2 - Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy hω = 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. We have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. Our work demonstrates that the Frohlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.

AB - Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy hω = 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. We have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. Our work demonstrates that the Frohlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.

UR - http://www.scopus.com/inward/record.url?scp=0029726096&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029726096&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029726096

VL - 395

SP - 565

EP - 569

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

Abstract

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