Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN

Kong-Thon Tsen, D. K. Ferry, A. Botchkarev, B. Sverdlov, A. Salvador, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Picosecond Raman spectroscopy has been employed to study electron-phonon interactions in the wide bandgap semiconductor GaN. An ultraviolet picosecond laser with photon energy hω = 4.36eV was used to excite electron-hole pairs in an undoped bulk GaN. The relaxation of these high energy electrons and holes were used to interrogate electron-phonon interactions. We have found that electrons thermalize toward the bottom of the conduction band by emitting primarily longitudinal optical phonons. Our work demonstrates that the Frohlich interaction is much stronger than the deformation potential interaction in wurtzite GaN.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages565-569
Number of pages5
Volume395
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/26/9512/1/95

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Tsen, K-T., Ferry, D. K., Botchkarev, A., Sverdlov, B., Salvador, A., & Morkoc, H. (1996). Picosecond Raman studies of electron-phonon interactions in the wide bandgap semiconductor GaN. In Materials Research Society Symposium - Proceedings (Vol. 395, pp. 565-569). Materials Research Society.