Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, C. Poweleit, J. M. Barker, D. K. Ferry, H. Morkoc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Picosecond Raman spectroscopy has been employed to study electron and hole transport in a GaAs-based p-i-n nanostructure. Electron as well hole velocity overshoots are observed. It has been demonstrated that due to the relatively long laser pulse used in the experiments the extent of overshoot is about the same in both cases.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1263-1264
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Liang, W., Tsen, K-T., Poweleit, C., Barker, J. M., Ferry, D. K., & Morkoc, H. (2005). Picosecond Raman studies of electron and hole velocity overshoots in a GaAs-based p-i-n semiconductor nanostructure. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1263-1264). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994571