Picosecond Raman scattering studies of nonequilibrium electron distributions and energy-loss rate in InxGa1 - xAs1 - yNy

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Abstract

Nonequilibrium electron distributions and energy-loss rate in a metal-organic chemical-vapor-deposition-grown InxGa1 - xAs1 - yNy (x = 0.03 and y = 0.01) epilayer on a GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n ≅ 1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of the excitation laser, the energy-loss rate in InxGa1 - xAs1 - yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original languageEnglish (US)
Pages (from-to)3094-3096
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number20
DOIs
StatePublished - May 14 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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