Abstract
The modeling of semiconductor devices almost always is done in order to try to explain or understand the underlying physics that produces an observed set of terminal characteristics. Thus, the model must incorporate the relevant physical processes, and good model development must rely on both intuition (of the theoretician) and experimental observations. We discuss the approaches used in developing models and the special problems that arise in submicron semiconductor devices.
| Original language | English (US) |
|---|---|
| Title of host publication | Acta Polytechnica Scandinavica, Electrical Engineering Series |
| Pages | 131-150 |
| Number of pages | 20 |
| Edition | 58 |
| State | Published - Dec 1 1987 |
| Event | Proc of the Adv Summer Sch on Microelectron, Phys and Technol for VLSI - Espoo, Finl Duration: Jun 8 1987 → Jun 12 1987 |
Other
| Other | Proc of the Adv Summer Sch on Microelectron, Phys and Technol for VLSI |
|---|---|
| City | Espoo, Finl |
| Period | 6/8/87 → 6/12/87 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering