Physics and applications of the Schottky junction transistor

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

This paper presents the results from numerical simulations of a novel subthreshold transistor configuration. The device uses the input current from a forward-biased Schottky gate to control the larger current flowing in a depleted channel. Analytical approximations are used to derive the current gain of the transistor. The numerical simulations confirm the analytical derivation and show that a 0.5 μm gate length device would have a cutoff frequency approaching 10 GHz for supply voltages less than 0.5 V. Possible applications of the device in the areas of micropower analog circuits and ULSI logic are discussed.

Original languageEnglish (US)
Pages (from-to)2421-2427
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume48
Issue number10
DOIs
StatePublished - Oct 1 2001

Keywords

  • Metal semiconductor field effect transistors (MESFETs)
  • Schottky barriers
  • Semiconductor device modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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