TY - JOUR
T1 - Physically Unclonable Functions using Foundry SRAM Cells
AU - Clark, Lawrence T
AU - Medapuram, Sai Bharadwaj
AU - Kadiyala, Divya Kiran
AU - Brunhaver, John
PY - 2018/1/1
Y1 - 2018/1/1
N2 - This paper describes a low voltage physically unclonable function (PUF) implemented with SRAM circuits. The approach allows the use of foundry cells, which are used in this paper, and requires very minor modifications to standard SRAM arrays. The PUF functionality is designed into large 1M-bit SRAM arrays fabricated on a 55-nm process using the foundry supplied SRAM cell layouts. The low variability foundry process produces good PUF results, demonstrating that the approach should also be good on conventional processes, since greater mismatch should positively impact PUF performance as measured by code word stability. The impact of process corners is also experimentally determined. Unstable bits, which we attribute to random telegraph noise is shown to be at manageable levels. We describe the circuit operation, statistical behavior, and suggest helper data functions that allow operation without error correction. This is important since error correction necessarily allows some leakage of the underlying secret codes.
AB - This paper describes a low voltage physically unclonable function (PUF) implemented with SRAM circuits. The approach allows the use of foundry cells, which are used in this paper, and requires very minor modifications to standard SRAM arrays. The PUF functionality is designed into large 1M-bit SRAM arrays fabricated on a 55-nm process using the foundry supplied SRAM cell layouts. The low variability foundry process produces good PUF results, demonstrating that the approach should also be good on conventional processes, since greater mismatch should positively impact PUF performance as measured by code word stability. The impact of process corners is also experimentally determined. Unstable bits, which we attribute to random telegraph noise is shown to be at manageable levels. We describe the circuit operation, statistical behavior, and suggest helper data functions that allow operation without error correction. This is important since error correction necessarily allows some leakage of the underlying secret codes.
KW - Error correction codes
KW - Foundries
KW - Integrated circuits
KW - physically unclonable functions
KW - random telegraph noise.
KW - SRAM cells
KW - SRAM variability
KW - Standards
KW - Static random access memory
KW - Transistors
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U2 - 10.1109/TCSI.2018.2873777
DO - 10.1109/TCSI.2018.2873777
M3 - Article
AN - SCOPUS:85055200241
JO - IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
JF - IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications
SN - 1549-8328
ER -