Physical models for heterostructure FET simulation

Paolo Lugli, Andrea Neviani, Marco Saraniti

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Field effect transistors (FET) based on heterostructures between III‐V binary and ternary compounds have been demonstrated as outstanding semiconductor devices for microwave applications. This paper will present a critical discussion of the physical models that are used to study the prototype of heterostructure devices, that is the High Electron Mobility Transistor (HEMT). The main technological features involved in the fabrication of HEMT are outlined and their incorporation into theoretical models discussed.

Original languageEnglish (US)
Pages (from-to)447-456
Number of pages10
JournalEuropean Transactions on Telecommunications
Volume1
Issue number4
DOIs
StatePublished - 1990
Externally publishedYes

Fingerprint

High electron mobility transistors
Heterojunctions
Semiconductor devices
Field effect transistors
Microwaves
Fabrication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Physical models for heterostructure FET simulation. / Lugli, Paolo; Neviani, Andrea; Saraniti, Marco.

In: European Transactions on Telecommunications, Vol. 1, No. 4, 1990, p. 447-456.

Research output: Contribution to journalArticle

Lugli, Paolo ; Neviani, Andrea ; Saraniti, Marco. / Physical models for heterostructure FET simulation. In: European Transactions on Telecommunications. 1990 ; Vol. 1, No. 4. pp. 447-456.
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