Physical modeling of microwave transistors using a full-band/full-wave simulation approach

J. S. Ayubi-Moak; R. Akis; Marco Saraniti; D. K. Ferry; Stephen Goodnick

doi:10.1109/IWCE.2009.5091139

Physical modeling of microwave transistors using a full-band/full-wave simulation approach

J. S. Ayubi-Moak, R. Akis, Marco Saraniti, D. K. Ferry, Stephen Goodnick

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results.

Original language	English (US)
Title of host publication	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs	https://doi.org/10.1109/IWCE.2009.5091139
State	Published - 2009
Event	2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China Duration: May 27 2009 → May 29 2009

Publication series

Name	Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Other

Other	2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/Territory	China
City	Beijing
Period	5/27/09 → 5/29/09

Keywords

ADI-FDTD solver
Cellular Monte Carlo simulator
Full-band/full-wave
Global modeling

ASJC Scopus subject areas

Computational Mechanics
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IWCE.2009.5091139

Cite this

Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K., & Goodnick, S. (2009). Physical modeling of microwave transistors using a full-band/full-wave simulation approach. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 [5091139] (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). https://doi.org/10.1109/IWCE.2009.5091139

Physical modeling of microwave transistors using a full-band/full-wave simulation approach. / Ayubi-Moak, J. S.; Akis, R.; Saraniti, Marco et al.

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091139 (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ayubi-Moak, JS, Akis, R, Saraniti, M, Ferry, DK & Goodnick, S 2009, Physical modeling of microwave transistors using a full-band/full-wave simulation approach. in Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009., 5091139, Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009, 2009 13th International Workshop on Computational Electronics, IWCE 2009, Beijing, China, 5/27/09. https://doi.org/10.1109/IWCE.2009.5091139

Ayubi-Moak JS, Akis R, Saraniti M, Ferry DK, Goodnick S. Physical modeling of microwave transistors using a full-band/full-wave simulation approach. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091139. (Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009). doi: 10.1109/IWCE.2009.5091139

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Physical modeling of microwave transistors using a full-band/full-wave simulation approach

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Keywords

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