Abstract

In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results.

Original languageEnglish (US)
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: May 27 2009May 29 2009

Other

Other2009 13th International Workshop on Computational Electronics, IWCE 2009
CountryChina
CityBeijing
Period5/27/095/29/09

Fingerprint

Parameter extraction
Scattering parameters
Frequency response
Transistors
Simulators
Microwaves
Direction compound
gallium arsenide

Keywords

  • ADI-FDTD solver
  • Cellular Monte Carlo simulator
  • Full-band/full-wave
  • Global modeling

ASJC Scopus subject areas

  • Computational Mechanics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ayubi-Moak, J. S., Akis, R., Saraniti, M., Ferry, D. K., & Goodnick, S. (2009). Physical modeling of microwave transistors using a full-band/full-wave simulation approach. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009 [5091139] https://doi.org/10.1109/IWCE.2009.5091139

Physical modeling of microwave transistors using a full-band/full-wave simulation approach. / Ayubi-Moak, J. S.; Akis, R.; Saraniti, Marco; Ferry, D. K.; Goodnick, Stephen.

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091139.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ayubi-Moak, JS, Akis, R, Saraniti, M, Ferry, DK & Goodnick, S 2009, Physical modeling of microwave transistors using a full-band/full-wave simulation approach. in Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009., 5091139, 2009 13th International Workshop on Computational Electronics, IWCE 2009, Beijing, China, 5/27/09. https://doi.org/10.1109/IWCE.2009.5091139
Ayubi-Moak JS, Akis R, Saraniti M, Ferry DK, Goodnick S. Physical modeling of microwave transistors using a full-band/full-wave simulation approach. In Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009. 5091139 https://doi.org/10.1109/IWCE.2009.5091139
Ayubi-Moak, J. S. ; Akis, R. ; Saraniti, Marco ; Ferry, D. K. ; Goodnick, Stephen. / Physical modeling of microwave transistors using a full-band/full-wave simulation approach. Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009. 2009.
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