Abstract

In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results.

Original languageEnglish (US)
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - Oct 27 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: May 27 2009May 29 2009

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Other

Other2009 13th International Workshop on Computational Electronics, IWCE 2009
CountryChina
CityBeijing
Period5/27/095/29/09

Keywords

  • ADI-FDTD solver
  • Cellular Monte Carlo simulator
  • Full-band/full-wave
  • Global modeling

ASJC Scopus subject areas

  • Computational Mechanics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Physical modeling of microwave transistors using a full-band/full-wave simulation approach'. Together they form a unique fingerprint.

Cite this