Physical characterization of a-Si thin films deposited by thermal decomposition of iodosilanes

G. Tamizhmani, Michael Cocivera, Richard T. Oakley, Charles Fischer, Minoru Fujimoto

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

Amorphous silicon thin films have been deposited by a new chemical vapour deposition process using iodosilane precursors at atmospheric pressure. Fourier transform infrared, ultraviolet/visible, electron spin resonance and Rutherford backscattering spectroscopies along with scanning electron microscopy and resistivity measurements were used to determine some of the properties of films that were prepared under various conditions and subjected to post-deposition treatments. It was found that the dangling bond density could be decreased by post-deposition heat treatment in an atmosphere of hydrogen or argon.

Original languageEnglish (US)
Pages (from-to)1015-1021
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume24
Issue number6
DOIs
StatePublished - Jan 1 1991
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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