Physical and electrical properties of laser-annealed ion-implanted silicon

A. Gat; J. F. Gibbons; T. J. Magee; J. Peng; V. R. Deline; P. Williams; C. A. Evans

doi:10.1063/1.90046

Physical and electrical properties of laser-annealed ion-implanted silicon

A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, V. R. Deline, P. Williams, C. A. Evans

Research output: Contribution to journal › Article › peer-review

126 Scopus citations

Abstract

The use of a laser as a tool for annealing of ion-implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000°C 30-min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.

Original language	English (US)
Pages (from-to)	276-278
Number of pages	3
Journal	Applied Physics Letters
Volume	32
Issue number	5
DOIs	https://doi.org/10.1063/1.90046
State	Published - 1978
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The use of a laser as a tool for annealing of ion-implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000°C 30-min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.",

author = "A. Gat and Gibbons, {J. F.} and Magee, {T. J.} and J. Peng and Deline, {V. R.} and P. Williams and Evans, {C. A.}",

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T1 - Physical and electrical properties of laser-annealed ion-implanted silicon

AU - Gat, A.

AU - Gibbons, J. F.

AU - Magee, T. J.

AU - Peng, J.

AU - Deline, V. R.

AU - Williams, P.

AU - Evans, C. A.

PY - 1978

Y1 - 1978

N2 - The use of a laser as a tool for annealing of ion-implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000°C 30-min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.

AB - The use of a laser as a tool for annealing of ion-implantation damage is described. The principal results obtained are as follows: (1) electrical measurements show that activity comparable to that of a 1000°C 30-min anneal can be obtained; (2) TEM measurements show that complete recrystallization of the damaged layer occurs during the laser anneal; (3) impurity profiles obtained from SIMS measurments show that the dopant atoms remain in the LSS profile during annealing. Simple diodes were fabricated to examine the feasibility of the method for device fabrication.

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SP - 276

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Physical and electrical properties of laser-annealed ion-implanted silicon

Abstract

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