Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

V. W. Ballarotto, K. Siegrist, R. J. Phaneuf, E. D. Williams, W. C. Yang, R. J. Nemanich

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12 Scopus citations

Abstract

We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states.

Original languageEnglish (US)
Pages (from-to)3547-3549
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number22
DOIs
StatePublished - May 28 2001
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ballarotto, V. W., Siegrist, K., Phaneuf, R. J., Williams, E. D., Yang, W. C., & Nemanich, R. J. (2001). Photon energy dependence of contrast in photoelectron emission microscopy of Si devices. Applied Physics Letters, 78(22), 3547-3549. https://doi.org/10.1063/1.1376151