Photoluminescence study of type-II submonolayer quantum dots

Minseak Kim, Hyun Jun Jo, Mo Geun So, Jong Su Kim, Yeongho Kim, Sang Jun Lee, Seung Hyun Lee, Christiana Honsberg, Heedae Kim

Research output: Contribution to journalArticle

Abstract

We have studied the optical properties of InAs/GaAsSb submonolayer quantum dots (SML-QDs) through excitation intensity (Iex) and temperature dependent photoluminescence (PL) experiments. The SML-QDs with type-I (T-1) and type-II (T-2) band structures were grown using a GaAsSb spacer with a Sb composition of 0% and 15.8%. At 13 K, the PL signals from the T-1 and the T-2 samples were observed at 1.42 eV and 1.37 eV, respectively, when the Iex was 8.7 mW/cm2. The PL signal of the T-1 sample is due to the recombination of electrons and holes in the InAs SML-QDs. The PL signal of the T-2 sample is due to the recombination of electrons (in the GaAs electron band) and holes (in the GaAsSb spacer hole band) by type-II band alignment formed between GaAs and GaAsSb. The full widths at half maxima (FWHMs) of the T-1 and the T-2 samples were 7.09 meV and 24.6 meV, respectively, because the T-2 sample has a lower uniformity than the T-1 sample. As the excitation intensity was increased, the PL signals of the T-1 and the T-2 samples shifted to lower energy because of the quantum-confined Stark effect. As a result of these temperature-dependent PL experiments, the activation energy of the T-1 sample was found to be 30 meV.

Original languageEnglish (US)
Pages (from-to)794-799
Number of pages6
JournalNew Physics: Sae Mulli
Volume69
Issue number8
DOIs
StatePublished - Jan 1 2019

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quantum dots
photoluminescence
spacers
electrons
Stark effect
excitation
alignment
activation energy
optical properties
temperature

Keywords

  • III-V semiconductor
  • Photoluminescence
  • Quantum dot
  • Quasimonolayer
  • Submonolayer

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Kim, M., Jo, H. J., So, M. G., Kim, J. S., Kim, Y., Lee, S. J., ... Kim, H. (2019). Photoluminescence study of type-II submonolayer quantum dots. New Physics: Sae Mulli, 69(8), 794-799. https://doi.org/10.3938/NPSM.69.794

Photoluminescence study of type-II submonolayer quantum dots. / Kim, Minseak; Jo, Hyun Jun; So, Mo Geun; Kim, Jong Su; Kim, Yeongho; Lee, Sang Jun; Lee, Seung Hyun; Honsberg, Christiana; Kim, Heedae.

In: New Physics: Sae Mulli, Vol. 69, No. 8, 01.01.2019, p. 794-799.

Research output: Contribution to journalArticle

Kim, M, Jo, HJ, So, MG, Kim, JS, Kim, Y, Lee, SJ, Lee, SH, Honsberg, C & Kim, H 2019, 'Photoluminescence study of type-II submonolayer quantum dots', New Physics: Sae Mulli, vol. 69, no. 8, pp. 794-799. https://doi.org/10.3938/NPSM.69.794
Kim M, Jo HJ, So MG, Kim JS, Kim Y, Lee SJ et al. Photoluminescence study of type-II submonolayer quantum dots. New Physics: Sae Mulli. 2019 Jan 1;69(8):794-799. https://doi.org/10.3938/NPSM.69.794
Kim, Minseak ; Jo, Hyun Jun ; So, Mo Geun ; Kim, Jong Su ; Kim, Yeongho ; Lee, Sang Jun ; Lee, Seung Hyun ; Honsberg, Christiana ; Kim, Heedae. / Photoluminescence study of type-II submonolayer quantum dots. In: New Physics: Sae Mulli. 2019 ; Vol. 69, No. 8. pp. 794-799.
@article{73da496e0e834ad99b4efb8e0c0119a9,
title = "Photoluminescence study of type-II submonolayer quantum dots",
abstract = "We have studied the optical properties of InAs/GaAsSb submonolayer quantum dots (SML-QDs) through excitation intensity (Iex) and temperature dependent photoluminescence (PL) experiments. The SML-QDs with type-I (T-1) and type-II (T-2) band structures were grown using a GaAsSb spacer with a Sb composition of 0{\%} and 15.8{\%}. At 13 K, the PL signals from the T-1 and the T-2 samples were observed at 1.42 eV and 1.37 eV, respectively, when the Iex was 8.7 mW/cm2. The PL signal of the T-1 sample is due to the recombination of electrons and holes in the InAs SML-QDs. The PL signal of the T-2 sample is due to the recombination of electrons (in the GaAs electron band) and holes (in the GaAsSb spacer hole band) by type-II band alignment formed between GaAs and GaAsSb. The full widths at half maxima (FWHMs) of the T-1 and the T-2 samples were 7.09 meV and 24.6 meV, respectively, because the T-2 sample has a lower uniformity than the T-1 sample. As the excitation intensity was increased, the PL signals of the T-1 and the T-2 samples shifted to lower energy because of the quantum-confined Stark effect. As a result of these temperature-dependent PL experiments, the activation energy of the T-1 sample was found to be 30 meV.",
keywords = "III-V semiconductor, Photoluminescence, Quantum dot, Quasimonolayer, Submonolayer",
author = "Minseak Kim and Jo, {Hyun Jun} and So, {Mo Geun} and Kim, {Jong Su} and Yeongho Kim and Lee, {Sang Jun} and Lee, {Seung Hyun} and Christiana Honsberg and Heedae Kim",
year = "2019",
month = "1",
day = "1",
doi = "10.3938/NPSM.69.794",
language = "English (US)",
volume = "69",
pages = "794--799",
journal = "New Physics: Sae Mulli",
issn = "0374-4914",
publisher = "Korean Physical Society",
number = "8",

}

TY - JOUR

T1 - Photoluminescence study of type-II submonolayer quantum dots

AU - Kim, Minseak

AU - Jo, Hyun Jun

AU - So, Mo Geun

AU - Kim, Jong Su

AU - Kim, Yeongho

AU - Lee, Sang Jun

AU - Lee, Seung Hyun

AU - Honsberg, Christiana

AU - Kim, Heedae

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We have studied the optical properties of InAs/GaAsSb submonolayer quantum dots (SML-QDs) through excitation intensity (Iex) and temperature dependent photoluminescence (PL) experiments. The SML-QDs with type-I (T-1) and type-II (T-2) band structures were grown using a GaAsSb spacer with a Sb composition of 0% and 15.8%. At 13 K, the PL signals from the T-1 and the T-2 samples were observed at 1.42 eV and 1.37 eV, respectively, when the Iex was 8.7 mW/cm2. The PL signal of the T-1 sample is due to the recombination of electrons and holes in the InAs SML-QDs. The PL signal of the T-2 sample is due to the recombination of electrons (in the GaAs electron band) and holes (in the GaAsSb spacer hole band) by type-II band alignment formed between GaAs and GaAsSb. The full widths at half maxima (FWHMs) of the T-1 and the T-2 samples were 7.09 meV and 24.6 meV, respectively, because the T-2 sample has a lower uniformity than the T-1 sample. As the excitation intensity was increased, the PL signals of the T-1 and the T-2 samples shifted to lower energy because of the quantum-confined Stark effect. As a result of these temperature-dependent PL experiments, the activation energy of the T-1 sample was found to be 30 meV.

AB - We have studied the optical properties of InAs/GaAsSb submonolayer quantum dots (SML-QDs) through excitation intensity (Iex) and temperature dependent photoluminescence (PL) experiments. The SML-QDs with type-I (T-1) and type-II (T-2) band structures were grown using a GaAsSb spacer with a Sb composition of 0% and 15.8%. At 13 K, the PL signals from the T-1 and the T-2 samples were observed at 1.42 eV and 1.37 eV, respectively, when the Iex was 8.7 mW/cm2. The PL signal of the T-1 sample is due to the recombination of electrons and holes in the InAs SML-QDs. The PL signal of the T-2 sample is due to the recombination of electrons (in the GaAs electron band) and holes (in the GaAsSb spacer hole band) by type-II band alignment formed between GaAs and GaAsSb. The full widths at half maxima (FWHMs) of the T-1 and the T-2 samples were 7.09 meV and 24.6 meV, respectively, because the T-2 sample has a lower uniformity than the T-1 sample. As the excitation intensity was increased, the PL signals of the T-1 and the T-2 samples shifted to lower energy because of the quantum-confined Stark effect. As a result of these temperature-dependent PL experiments, the activation energy of the T-1 sample was found to be 30 meV.

KW - III-V semiconductor

KW - Photoluminescence

KW - Quantum dot

KW - Quasimonolayer

KW - Submonolayer

UR - http://www.scopus.com/inward/record.url?scp=85072170976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072170976&partnerID=8YFLogxK

U2 - 10.3938/NPSM.69.794

DO - 10.3938/NPSM.69.794

M3 - Article

AN - SCOPUS:85072170976

VL - 69

SP - 794

EP - 799

JO - New Physics: Sae Mulli

JF - New Physics: Sae Mulli

SN - 0374-4914

IS - 8

ER -