Abstract

This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation-density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm2 to 20 W/cm2. A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9451
EditionJanuary
DOIs
StatePublished - 2015
Event41st Conference on Infrared Technology and Applications - Baltimore, United States
Duration: Apr 20 2015Apr 23 2015

Other

Other41st Conference on Infrared Technology and Applications
CountryUnited States
CityBaltimore
Period4/20/154/23/15

Fingerprint

Superlattices
Photoluminescence
Recombination
superlattices
Infrared radiation
photoluminescence
Wavelength
Infrared
Excitation
radiative recombination
Lifetime
wavelengths
excitation
Molecular beam epitaxy
life (durability)
recombination coefficient
Epitaxy
Theoretical Model
molecular beam epitaxy
Series

Keywords

  • InAs/InAsSb
  • Infrared photodetector
  • Type-II superlattice

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lin, Z. Y., Fan, J., Liu, S., & Zhang, Y-H. (2015). Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices. In Proceedings of SPIE - The International Society for Optical Engineering (January ed., Vol. 9451). [94510Q] SPIE. https://doi.org/10.1117/12.2177526

Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices. / Lin, Zhi Yuan; Fan, Jin; Liu, Shi; Zhang, Yong-Hang.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9451 January. ed. SPIE, 2015. 94510Q.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lin, ZY, Fan, J, Liu, S & Zhang, Y-H 2015, Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices. in Proceedings of SPIE - The International Society for Optical Engineering. January edn, vol. 9451, 94510Q, SPIE, 41st Conference on Infrared Technology and Applications, Baltimore, United States, 4/20/15. https://doi.org/10.1117/12.2177526
Lin ZY, Fan J, Liu S, Zhang Y-H. Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices. In Proceedings of SPIE - The International Society for Optical Engineering. January ed. Vol. 9451. SPIE. 2015. 94510Q https://doi.org/10.1117/12.2177526
Lin, Zhi Yuan ; Fan, Jin ; Liu, Shi ; Zhang, Yong-Hang. / Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9451 January. ed. SPIE, 2015.
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