Abstract
This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation-density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm2 to 20 W/cm2. A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Publisher | SPIE |
Volume | 9451 |
Edition | January |
DOIs | |
State | Published - 2015 |
Event | 41st Conference on Infrared Technology and Applications - Baltimore, United States Duration: Apr 20 2015 → Apr 23 2015 |
Other
Other | 41st Conference on Infrared Technology and Applications |
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Country/Territory | United States |
City | Baltimore |
Period | 4/20/15 → 4/23/15 |
Keywords
- InAs/InAsSb
- Infrared photodetector
- Type-II superlattice
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics