Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

Zhi Yuan Lin, Jin Fan, Shi Liu, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation-density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm2 to 20 W/cm2. A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9451
EditionJanuary
DOIs
StatePublished - 2015
Event41st Conference on Infrared Technology and Applications - Baltimore, United States
Duration: Apr 20 2015Apr 23 2015

Other

Other41st Conference on Infrared Technology and Applications
CountryUnited States
CityBaltimore
Period4/20/154/23/15

Keywords

  • InAs/InAsSb
  • Infrared photodetector
  • Type-II superlattice

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices'. Together they form a unique fingerprint.

  • Cite this

    Lin, Z. Y., Fan, J., Liu, S., & Zhang, Y-H. (2015). Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices. In Proceedings of SPIE - The International Society for Optical Engineering (January ed., Vol. 9451). [94510Q] SPIE. https://doi.org/10.1117/12.2177526