Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films

T. P. Humphreys, R. J. Nemanich, K. Das, N. R. Parikh, J. B. Posthill

Research output: Contribution to journalArticle

Abstract

GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solidphase epitaxy process are strain-free.

Original languageEnglish (US)
Pages (from-to)835-837
Number of pages3
JournalElectronics Letters
Volume26
Issue number13
DOIs
StatePublished - 1990
Externally publishedYes

Keywords

  • Semiconductor devices and materials
  • Spectroscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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