Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films

T. P. Humphreys; R. J. Nemanich; K. Das; N. R. Parikh; J. B. Posthill

doi:10.1049/el:19900548

Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films

T. P. Humphreys, R. J. Nemanich, K. Das, N. R. Parikh, J. B. Posthill

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solidphase epitaxy process are strain-free.

Original language	English (US)
Pages (from-to)	835-837
Number of pages	3
Journal	Electronics Letters
Volume	26
Issue number	13
DOIs	https://doi.org/10.1049/el:19900548
State	Published - 1990
Externally published	Yes

Keywords

Semiconductor devices and materials
Spectroscopy

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900548

Cite this

@article{047e61b19da446a49172cbed2d185eab,

title = "Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films",

abstract = "GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solidphase epitaxy process are strain-free.",

keywords = "Semiconductor devices and materials, Spectroscopy",

author = "Humphreys, {T. P.} and Nemanich, {R. J.} and K. Das and Parikh, {N. R.} and Posthill, {J. B.}",

year = "1990",

doi = "10.1049/el:19900548",

language = "English (US)",

volume = "26",

pages = "835--837",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "13",

}

TY - JOUR

T1 - Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films

AU - Humphreys, T. P.

AU - Nemanich, R. J.

AU - Das, K.

AU - Parikh, N. R.

AU - Posthill, J. B.

PY - 1990

Y1 - 1990

N2 - GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solidphase epitaxy process are strain-free.

AB - GaAs films have been grown on silicon and various insulating substrates. These include silicon-on-sapphire, silicon with a buried implanted oxide, and single crystal sapphire. Quantitative comparison of the respective measured shifts in the dominant photoluminescence peaks (7K) indicates that the GaAs layers deposited on silicon-on-sapphire substrates that have been microstructurally upgraded by the double solidphase epitaxy process are strain-free.

KW - Semiconductor devices and materials

KW - Spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0025445564&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025445564&partnerID=8YFLogxK

U2 - 10.1049/el:19900548

DO - 10.1049/el:19900548

M3 - Article

AN - SCOPUS:0025445564

SN - 0013-5194

VL - 26

SP - 835

EP - 837

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Photoluminescence Spectroscopy Measurement of Elastic Strain in Heteroepitaxial Gaas Films

Abstract

Keywords

ASJC Scopus subject areas

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