Photoluminescence of GaN nanowires of different crystallographic orientations

Alan H. Chin, Tai S. Ahn, Hongwei Li, Sreeram Vaddiraju, Christopher J. Bardeen, Cun Zheng Ning, Mahendra K. Sunkara

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

Original languageEnglish (US)
Pages (from-to)626-631
Number of pages6
JournalNano Letters
Volume7
Issue number3
DOIs
StatePublished - Mar 1 2007
Externally publishedYes

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Photoluminescence of GaN nanowires of different crystallographic orientations'. Together they form a unique fingerprint.

Cite this