Photoluminescence of GaN nanowires of different crystallographic orientations

Alan H. Chin; Tai S. Ahn; Hongwei Li; Sreeram Vaddiraju; Christopher J. Bardeen; Cun Zheng Ning; Mahendra K. Sunkara

doi:10.1021/nl062524o

Photoluminescence of GaN nanowires of different crystallographic orientations

Alan H. Chin, Tai S. Ahn, Hongwei Li, Sreeram Vaddiraju, Christopher J. Bardeen, Cun Zheng Ning, Mahendra K. Sunkara

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

Original language	English (US)
Pages (from-to)	626-631
Number of pages	6
Journal	Nano Letters
Volume	7
Issue number	3
DOIs	https://doi.org/10.1021/nl062524o
State	Published - Mar 2007

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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title = "Photoluminescence of GaN nanowires of different crystallographic orientations",

abstract = "We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.",

author = "Chin, {Alan H.} and Ahn, {Tai S.} and Hongwei Li and Sreeram Vaddiraju and Bardeen, {Christopher J.} and Ning, {Cun Zheng} and Sunkara, {Mahendra K.}",

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T1 - Photoluminescence of GaN nanowires of different crystallographic orientations

AU - Chin, Alan H.

AU - Ahn, Tai S.

AU - Li, Hongwei

AU - Vaddiraju, Sreeram

AU - Bardeen, Christopher J.

AU - Ning, Cun Zheng

AU - Sunkara, Mahendra K.

PY - 2007/3

Y1 - 2007/3

N2 - We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

AB - We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

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VL - 7

SP - 626

EP - 631

JO - Nano Letters

JF - Nano Letters

IS - 3

ER -

Photoluminescence of GaN nanowires of different crystallographic orientations

Abstract

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