Photoluminescence of GaN nanowires of different crystallographic orientations

Alan H. Chin, Tai S. Ahn, Hongwei Li, Sreeram Vaddiraju, Christopher J. Bardeen, Cun Zheng Ning, Mahendra K. Sunkara

Research output: Contribution to journalArticle

68 Scopus citations

Abstract

We utilized time-integrated and time-resolved photoluminescence of a-axis and c-axis gallium nitride nanowires to elucidate the origin of the blue-shifted ultraviolet photoluminescence in a-axis GaN nanowires relative to c-axis GaN nanowires. We attribute this blue-shifted ultraviolet photoluminescence to emission from surface trap states as opposed to previously proposed causes such as strain effects or built-in polarization. These results demonstrate the importance of accounting for surface effects when considering ultraviolet optoelectronic devices based on GaN nanowires.

Original languageEnglish (US)
Pages (from-to)626-631
Number of pages6
JournalNano Letters
Volume7
Issue number3
DOIs
StatePublished - Mar 1 2007

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ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Chin, A. H., Ahn, T. S., Li, H., Vaddiraju, S., Bardeen, C. J., Ning, C. Z., & Sunkara, M. K. (2007). Photoluminescence of GaN nanowires of different crystallographic orientations. Nano Letters, 7(3), 626-631. https://doi.org/10.1021/nl062524o