Photoluminescence, magnetospectroscopy, and resonant electronic Raman studies of heteroepitaxial gallium nitride

Engineering & Materials Science

• Photoluminescence 100%
• Gallium nitride 85%
• Excitons 72%
• Vapor phase epitaxy 54%
• Hydrides 38%
• Magnetic fields 36%
• Binding energy 32%
• Raman scattering 29%
• Passivation 24%
• Electrons 20%
• Sodium sulfide 17%
• Temperature 16%
• Metallorganic chemical vapor deposition 16%
• Satellites 15%
• Spectral resolution 14%
• Reflectometers 14%
• Sapphire 13%
• Linewidth 12%
• Spectroscopy 11%
• Air 11%
• Anisotropy 10%
• Permittivity 10%
• Impurities 9%

Chemical Compounds

• Nitride 59%
• Vapor Phase Epitaxy 48%
• Photoluminescence 47%
• Exciton 41%
• Magnetic Field 38%
• Hydride 26%
• Ambient Reaction Temperature 22%
• Chemical Passivation 20%
• Binding Energy 18%
• Donor Level 16%
• Surface Recombination 15%
• Effective Mass 14%
• Donor 14%
• Selection Rule 13%
• Optical Spectroscopy 11%
• Anisotropy 9%
• Dielectric Constant 9%
• Chemical Vapour Deposition 9%
• Ammonium 8%
• Sulfide 8%
• Strain 7%
• Surface 6%
• Sodium Atom 6%
• Reaction Yield 4%