Photoluminescence in Si1-x-yGexCy alloys

J. D. Lorentzen; G. H. Loechelt; M. Meléndez-Lira; Jose Menendez; S. Sego; Robert Culbertson; W. Windl; O. F. Sankey; A. E. Bair; Terry Alford

doi:10.1063/1.118871

Photoluminescence in Si_1-x-yGe_xC_y alloys

J. D. Lorentzen, G. H. Loechelt, M. Meléndez-Lira, Jose Menendez, S. Sego, Robert Culbertson, W. Windl, O. F. Sankey, A. E. Bair, Terry Alford

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report photoluminescence from Si_1-x-yGe_xC_y films grown epitaxially on Si (100) by chemical vapor deposition. We observe significant energy shifts but no dramatic changes in the photoluminescence line shape caused by the presence of carbon. Using standard deformation potential theory to correct the epitaxial strain shifts, we conclude that the band gap of relaxed Si_1-x-yGe_xC_y alloys has a lower energy than the band gap of relaxed Si_1-xGe_x with the same Si/Ge ratio. We propose an explanation of these results based on the assumption that carbon forms a resonant level within the conduction band of Si_1-xGe_x.

Original language	English (US)
Pages (from-to)	2353-2355
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	18
DOIs	https://doi.org/10.1063/1.118871
State	Published - May 5 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{859a42f2e03c4e78bc50c9812bdd737b,

title = "Photoluminescence in Si1-x-yGexCy alloys",

abstract = "We report photoluminescence from Si1-x-yGexCy films grown epitaxially on Si (100) by chemical vapor deposition. We observe significant energy shifts but no dramatic changes in the photoluminescence line shape caused by the presence of carbon. Using standard deformation potential theory to correct the epitaxial strain shifts, we conclude that the band gap of relaxed Si1-x-yGexCy alloys has a lower energy than the band gap of relaxed Si1-xGex with the same Si/Ge ratio. We propose an explanation of these results based on the assumption that carbon forms a resonant level within the conduction band of Si1-xGex.",

author = "Lorentzen, {J. D.} and Loechelt, {G. H.} and M. Mel{\'e}ndez-Lira and Jose Menendez and S. Sego and Robert Culbertson and W. Windl and Sankey, {O. F.} and Bair, {A. E.} and Terry Alford",

year = "1997",

month = may,

day = "5",

doi = "10.1063/1.118871",

language = "English (US)",

volume = "70",

pages = "2353--2355",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Photoluminescence in Si1-x-yGexCy alloys

AU - Lorentzen, J. D.

AU - Loechelt, G. H.

AU - Meléndez-Lira, M.

AU - Menendez, Jose

AU - Sego, S.

AU - Culbertson, Robert

AU - Windl, W.

AU - Sankey, O. F.

AU - Bair, A. E.

AU - Alford, Terry

PY - 1997/5/5

Y1 - 1997/5/5

N2 - We report photoluminescence from Si1-x-yGexCy films grown epitaxially on Si (100) by chemical vapor deposition. We observe significant energy shifts but no dramatic changes in the photoluminescence line shape caused by the presence of carbon. Using standard deformation potential theory to correct the epitaxial strain shifts, we conclude that the band gap of relaxed Si1-x-yGexCy alloys has a lower energy than the band gap of relaxed Si1-xGex with the same Si/Ge ratio. We propose an explanation of these results based on the assumption that carbon forms a resonant level within the conduction band of Si1-xGex.

AB - We report photoluminescence from Si1-x-yGexCy films grown epitaxially on Si (100) by chemical vapor deposition. We observe significant energy shifts but no dramatic changes in the photoluminescence line shape caused by the presence of carbon. Using standard deformation potential theory to correct the epitaxial strain shifts, we conclude that the band gap of relaxed Si1-x-yGexCy alloys has a lower energy than the band gap of relaxed Si1-xGex with the same Si/Ge ratio. We propose an explanation of these results based on the assumption that carbon forms a resonant level within the conduction band of Si1-xGex.

UR - http://www.scopus.com/inward/record.url?scp=0006004523&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006004523&partnerID=8YFLogxK

U2 - 10.1063/1.118871

DO - 10.1063/1.118871

M3 - Article

AN - SCOPUS:0006004523

SN - 0003-6951

VL - 70

SP - 2353

EP - 2355

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Photoluminescence in Si_1-x-yGe_xC_y alloys

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