Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

B. J. Skromme, G. E. Stillman, A. R. Calawa, G. M. Metze

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

High purity undoped molecular beam epitaxial GaAs layers grown using cracked AsH3 as the As source have been characterized by low-temperature (1.7-20 K) photoluminescence measurements. The dominant residual acceptor was found to be either Mg or Be (which cannot be distinguished by this technique), with smaller amounts of C, Si, Ge, Sn, and Mn also present. The incorporation of residual amphoteric impurities depends strongly on the As to Ga flux ratio. The]] defect"-related luminescence characteristic of material grown with a solid As source was not detected. A sample grown in the same system using solid As showed only C acceptors but did produce defect luminescence.

Original languageEnglish (US)
Pages (from-to)240-242
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number2
DOIs
StatePublished - Dec 1 1984
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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