Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice

Leah Bergman, Mitra Dutta, M. A. Stroscio, S. M. Komirenko, Robert Nemanich, C. J. Eiting, D. J H Lambert, H. K. Kwon, R. D. Dupuis

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Abstract

A detailed study of photoluminescence (PL) of GaN(1 nm)/Al0.2Ga0.8N(3.3 nm) twenty periods superlattice grown via metal-organic chemical vapor deposition is presented. The dependence of the PL emission energy, linewidth, and intensity on temperature, in the low temperature regime, is consistent with recombination mechanisms involving bandtail states attributed to a small degree of interfacial disorder. The activation energy of the nonradiative centers in our superlattice agrees well with the value we derive for the width of the tail-state distribution. Moreover, we find that the average phonon energy of the phonons that control the interhand PL energy at high temperatures is larger for the superlattice than for a high-quality GaN film. This observation is consistent with model calculations predicting the phonon mode properties of GaN-AIN-based wurtzite heterostructures.

Original languageEnglish (US)
Pages (from-to)1969-1971
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number15
Publication statusPublished - Apr 10 2000
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bergman, L., Dutta, M., Stroscio, M. A., Komirenko, S. M., Nemanich, R., Eiting, C. J., ... Dupuis, R. D. (2000). Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice. Applied Physics Letters, 76(15), 1969-1971.