Photoinjected hot-electron damage in silicon point-contact solar cells

P. E. Gruenbaum, Richard King, R. M. Swanson

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Initial designs of single-crystal silicon point-contact solar cells have shown a degradation in their efficiency after being exposed to concentrated sunlight. The main mechanism appears to be an increase in recombination centers at the Si/SiO2 interface due to ultraviolet light photoinjecting electrons from the silicon conduction band into the silicon dioxide that passivates the cell's front surface. The instability of the interface is significantly worse if the oxide is grown in the presence of trichloroethane. Texturization of the surface also leads to more instability. A reasonably good resistance to ultraviolet can be created by putting a phosphorus diffusion at the surface, and can be improved further by stripping off the deposited oxide after the diffusion and regrowing a dry thermal oxide.

Original languageEnglish (US)
Pages (from-to)6110-6114
Number of pages5
JournalJournal of Applied Physics
Volume66
Issue number12
DOIs
StatePublished - 1989
Externally publishedYes

Fingerprint

hot electrons
solar cells
damage
oxides
silicon
sunlight
stripping
ultraviolet radiation
phosphorus
conduction bands
degradation
silicon dioxide
single crystals
cells
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoinjected hot-electron damage in silicon point-contact solar cells. / Gruenbaum, P. E.; King, Richard; Swanson, R. M.

In: Journal of Applied Physics, Vol. 66, No. 12, 1989, p. 6110-6114.

Research output: Contribution to journalArticle

Gruenbaum, P. E. ; King, Richard ; Swanson, R. M. / Photoinjected hot-electron damage in silicon point-contact solar cells. In: Journal of Applied Physics. 1989 ; Vol. 66, No. 12. pp. 6110-6114.
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