Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

J. Siegert, A. Gaarder, S. Marcinkevičius, R. Leon, S. Chaparro, Shane Johnson, Y. Sadofyev, Yong-Hang Zhang

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-hatched patterns induced by metastable InxGa1-xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100-200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control "nonaligned" InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed.

Original languageEnglish (US)
Pages (from-to)541-546
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume18
Issue number4
DOIs
StatePublished - Jun 1 2003

Keywords

  • Dislocations
  • Lateral alignment
  • Quantum dots
  • Time-resolved photoluminescence

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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