Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

J. Siegert; A. Gaarder; S. Marcinkevičius; R. Leon; S. Chaparro; Shane Johnson; Y. Sadofyev; Yong-Hang Zhang

doi:10.1016/S1386-9477(03)00232-7

Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

J. Siegert, A. Gaarder, S. Marcinkevičius, R. Leon, S. Chaparro, Shane Johnson, Y. Sadofyev, Yong-Hang Zhang

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-hatched patterns induced by metastable In_xGa_1-xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100-200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control "nonaligned" InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed.

Original language	English (US)
Pages (from-to)	541-546
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	18
Issue number	4
DOIs	https://doi.org/10.1016/S1386-9477(03)00232-7
State	Published - Jun 2003

Keywords

Dislocations
Lateral alignment
Quantum dots
Time-resolved photoluminescence

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/S1386-9477(03)00232-7

Cite this

@article{40fd82df92aa431eb4a79b65e477e447,

title = "Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers",

abstract = "Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-hatched patterns induced by metastable InxGa1-xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100-200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control {"}nonaligned{"} InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed.",

keywords = "Dislocations, Lateral alignment, Quantum dots, Time-resolved photoluminescence",

author = "J. Siegert and A. Gaarder and S. Marcinkevi{\v c}ius and R. Leon and S. Chaparro and Shane Johnson and Y. Sadofyev and Yong-Hang Zhang",

note = "Funding Information: Financial support from the Swedish Foundation for International Cooperation in Research and Higher Education (STINT) and Carl Tryggers Foundation is gratefully acknowledged. Part of this research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration. ",

year = "2003",

month = jun,

doi = "10.1016/S1386-9477(03)00232-7",

language = "English (US)",

volume = "18",

pages = "541--546",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "4",

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TY - JOUR

T1 - Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

AU - Siegert, J.

AU - Gaarder, A.

AU - Marcinkevičius, S.

AU - Leon, R.

AU - Chaparro, S.

AU - Johnson, Shane

AU - Sadofyev, Y.

AU - Zhang, Yong-Hang

N1 - Funding Information: Financial support from the Swedish Foundation for International Cooperation in Research and Higher Education (STINT) and Carl Tryggers Foundation is gratefully acknowledged. Part of this research was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.

PY - 2003/6

Y1 - 2003/6

N2 - Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-hatched patterns induced by metastable InxGa1-xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100-200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control "nonaligned" InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed.

AB - Carrier dynamics in aligned InAs/GaAs quantum dots (QDs) grown on cross-hatched patterns induced by metastable InxGa1-xAs layers have been studied by time-resolved photoluminescence. The low-temperature carrier lifetimes were found to be of the order of 100-200 ps and determined by carrier trapping and nonradiative recombination. Comparisons with control "nonaligned" InAs QDs show remarkable differences in dependence of peak PL intensities on excitation power, and in PL decay times dependences on both temperature and excitation intensities. Possible origin of traps, which determine the carrier lifetimes, is discussed.

KW - Dislocations

KW - Lateral alignment

KW - Quantum dots

KW - Time-resolved photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=0038657896&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038657896&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(03)00232-7

DO - 10.1016/S1386-9477(03)00232-7

M3 - Article

AN - SCOPUS:0038657896

SN - 1386-9477

VL - 18

SP - 541

EP - 546

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 4

ER -

Photoexcited carrier dynamics in aligned InAs/GaAs quantum dots grown on strain-relaxed InGaAs layers

Abstract

Keywords

ASJC Scopus subject areas

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