Photoemission of the SiO2-SiC heterointerface

M. L. O'brien; C. Koitzsch; R. J. Nemanich

doi:10.1116/1.591471

Photoemission of the SiO₂-SiC heterointerface

M. L. O'brien, C. Koitzsch, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The formation of the SiO₂/SiC heterojunctions is monitored by ultraviolet photoemission spectroscopy (UPS). The band bending at the interface is also monitored. Plasma processing and remote plasma enhanced chemical vapor deposition (RPECVD) were used to oxidize and deposit oxides on the surface. The heterojunction band structure for the SiC/SiO₂ has been shown for 6H and 4H n-type SiC. The valence band offset was directly measured by UPS.

Original language	English (US)
Pages (from-to)	1776-1784
Number of pages	9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	3
DOIs	https://doi.org/10.1116/1.591471
State	Published - May 2000
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.591471

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@article{97d270323f3a4a18829b1f850464a261,

title = "Photoemission of the SiO2-SiC heterointerface",

abstract = "The formation of the SiO2/SiC heterojunctions is monitored by ultraviolet photoemission spectroscopy (UPS). The band bending at the interface is also monitored. Plasma processing and remote plasma enhanced chemical vapor deposition (RPECVD) were used to oxidize and deposit oxides on the surface. The heterojunction band structure for the SiC/SiO2 has been shown for 6H and 4H n-type SiC. The valence band offset was directly measured by UPS.",

author = "O'brien, {M. L.} and C. Koitzsch and Nemanich, {R. J.}",

year = "2000",

month = may,

doi = "10.1116/1.591471",

language = "English (US)",

volume = "18",

pages = "1776--1784",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

number = "3",

}

TY - JOUR

T1 - Photoemission of the SiO2-SiC heterointerface

AU - O'brien, M. L.

AU - Koitzsch, C.

AU - Nemanich, R. J.

PY - 2000/5

Y1 - 2000/5

N2 - The formation of the SiO2/SiC heterojunctions is monitored by ultraviolet photoemission spectroscopy (UPS). The band bending at the interface is also monitored. Plasma processing and remote plasma enhanced chemical vapor deposition (RPECVD) were used to oxidize and deposit oxides on the surface. The heterojunction band structure for the SiC/SiO2 has been shown for 6H and 4H n-type SiC. The valence band offset was directly measured by UPS.

AB - The formation of the SiO2/SiC heterojunctions is monitored by ultraviolet photoemission spectroscopy (UPS). The band bending at the interface is also monitored. Plasma processing and remote plasma enhanced chemical vapor deposition (RPECVD) were used to oxidize and deposit oxides on the surface. The heterojunction band structure for the SiC/SiO2 has been shown for 6H and 4H n-type SiC. The valence band offset was directly measured by UPS.

UR - http://www.scopus.com/inward/record.url?scp=0034350482&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034350482&partnerID=8YFLogxK

U2 - 10.1116/1.591471

DO - 10.1116/1.591471

M3 - Article

AN - SCOPUS:0034350482

SN - 1071-1023

VL - 18

SP - 1776

EP - 1784

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

ER -

Photoemission of the SiO₂-SiC heterointerface

Abstract

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