The formation of the SiO2/SiC heterojunctions is monitored by ultraviolet photoemission spectroscopy (UPS). The band bending at the interface is also monitored. Plasma processing and remote plasma enhanced chemical vapor deposition (RPECVD) were used to oxidize and deposit oxides on the surface. The heterojunction band structure for the SiC/SiO2 has been shown for 6H and 4H n-type SiC. The valence band offset was directly measured by UPS.
|Original language||English (US)|
|Number of pages||9|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - May 2000|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering