The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C-SiC (111)-(1x1) surfaces at 600 °C has been investigated using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two-dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of~2 nmbeyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C-SiC (111)-(1x1) surface to form a ScSi<inf>x</inf> and ScC<inf>x</inf> interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ~0.5 eV of upward band bending resulting in a Schottky barrier of 0.65±0.15 eV.
- Schottky barrier
- Silicon carbide
ASJC Scopus subject areas
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials