Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

Sean W. King; Robert Nemanich; Robert F. Davis

doi:10.1002/pssb.201451340

Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

Sean W. King, Robert Nemanich, Robert F. Davis

Physics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C-SiC (111)-(1x1) surfaces at 600 °C has been investigated using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two-dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of~2 nmbeyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C-SiC (111)-(1x1) surface to form a ScSi_x and ScC_x interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ~0.5 eV of upward band bending resulting in a Schottky barrier of 0.65±0.15 eV.

Original language	English (US)
Pages (from-to)	391-396
Number of pages	6
Journal	Physica Status Solidi (B) Basic Research
Volume	252
Issue number	2
DOIs	https://doi.org/10.1002/pssb.201451340
State	Published - Feb 1 2015

Keywords

Scandium
Schottky barrier
Silicon carbide
XPS

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssb.201451340

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title = "Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface",

abstract = "The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C-SiC (111)-(1x1) surfaces at 600 °C has been investigated using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two-dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of~2 nmbeyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C-SiC (111)-(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ~0.5 eV of upward band bending resulting in a Schottky barrier of 0.65±0.15 eV.",

keywords = "Scandium, Schottky barrier, Silicon carbide, XPS",

author = "King, {Sean W.} and Robert Nemanich and Davis, {Robert F.}",

note = "Publisher Copyright: {\textcopyright} 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

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doi = "10.1002/pssb.201451340",

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T1 - Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

AU - King, Sean W.

AU - Nemanich, Robert

AU - Davis, Robert F.

PY - 2015/2/1

Y1 - 2015/2/1

N2 - The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C-SiC (111)-(1x1) surfaces at 600 °C has been investigated using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two-dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of~2 nmbeyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C-SiC (111)-(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ~0.5 eV of upward band bending resulting in a Schottky barrier of 0.65±0.15 eV.

AB - The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C-SiC (111)-(1x1) surfaces at 600 °C has been investigated using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two-dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of~2 nmbeyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C-SiC (111)-(1x1) surface to form a ScSix and ScCx interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ~0.5 eV of upward band bending resulting in a Schottky barrier of 0.65±0.15 eV.

KW - Scandium

KW - Schottky barrier

KW - Silicon carbide

KW - XPS

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Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

Abstract

Keywords

ASJC Scopus subject areas

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