Photoemission investigation of the Schottky barrier at the Sc/3C-SiC (111) interface

Sean W. King, Robert Nemanich, Robert F. Davis

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

The Schottky barrier and interfacial chemistry for interfaces formed by evaporation of Sc onto 3C-SiC (111)-(1x1) surfaces at 600 °C has been investigated using in situ X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS) and low energy electron diffraction (LEED). Sc was observed to grow in a two-dimensional manner and exhibit a (1x1) LEED pattern up to thicknesses of~2 nmbeyond which diffraction patterns were no longer observable. XPS measurements of these same films showed a clear reaction of Sc with the 3C-SiC (111)-(1x1) surface to form a ScSi<inf>x</inf> and ScC<inf>x</inf> interfacial layer in addition to the formation of a metallic Sc film. XPS measurements also showed the deposition of Sc induced ~0.5 eV of upward band bending resulting in a Schottky barrier of 0.65±0.15 eV.

Original languageEnglish (US)
Pages (from-to)391-396
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume252
Issue number2
DOIs
StatePublished - Feb 1 2015

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Keywords

  • Scandium
  • Schottky barrier
  • Silicon carbide
  • XPS

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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