Photoemission from III-V semiconductor cathodes

Siddharth Karkare, Luca Cultrera, Bill Schaff, Ivan Bazarov, Xiuguang Jin, Yoshikazu Takeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Quantum efficiencies (QE) and mean transverse energies (MTE) of GaAs photocathodes grown using various techniques: metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and atomic polishing have been compared and found to be identical. GaAs and GaInP based samples grown at Nagoya University were activated and measured in the Cornell ERL photoinjector. These were found to be in agreement with the results obtained at the ERL injector in KEK.

Original languageEnglish (US)
Title of host publicationIPAC 2014
Subtitle of host publicationProceedings of the 5th International Particle Accelerator Conference
PublisherJoint Accelerator Conferences Website (JACoW)
Pages736-738
Number of pages3
ISBN (Electronic)9783954501328
StatePublished - Jul 1 2014
Externally publishedYes
Event5th International Particle Accelerator Conference, IPAC 2014 - Dresden, Germany
Duration: Jun 15 2014Jun 20 2014

Publication series

NameIPAC 2014: Proceedings of the 5th International Particle Accelerator Conference

Other

Other5th International Particle Accelerator Conference, IPAC 2014
CountryGermany
CityDresden
Period6/15/146/20/14

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Fingerprint Dive into the research topics of 'Photoemission from III-V semiconductor cathodes'. Together they form a unique fingerprint.

  • Cite this

    Karkare, S., Cultrera, L., Schaff, B., Bazarov, I., Jin, X., & Takeda, Y. (2014). Photoemission from III-V semiconductor cathodes. In IPAC 2014: Proceedings of the 5th International Particle Accelerator Conference (pp. 736-738). (IPAC 2014: Proceedings of the 5th International Particle Accelerator Conference). Joint Accelerator Conferences Website (JACoW).