TY - GEN
T1 - Photoemission from III-V semiconductor cathodes
AU - Karkare, Siddharth
AU - Cultrera, Luca
AU - Schaff, Bill
AU - Bazarov, Ivan
AU - Jin, Xiuguang
AU - Takeda, Yoshikazu
N1 - Publisher Copyright:
Copyright © 2014 CC-BY-3.0 and by the respective authors.
PY - 2014/7/1
Y1 - 2014/7/1
N2 - Quantum efficiencies (QE) and mean transverse energies (MTE) of GaAs photocathodes grown using various techniques: metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and atomic polishing have been compared and found to be identical. GaAs and GaInP based samples grown at Nagoya University were activated and measured in the Cornell ERL photoinjector. These were found to be in agreement with the results obtained at the ERL injector in KEK.
AB - Quantum efficiencies (QE) and mean transverse energies (MTE) of GaAs photocathodes grown using various techniques: metal-organic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and atomic polishing have been compared and found to be identical. GaAs and GaInP based samples grown at Nagoya University were activated and measured in the Cornell ERL photoinjector. These were found to be in agreement with the results obtained at the ERL injector in KEK.
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M3 - Conference contribution
AN - SCOPUS:84928319509
T3 - IPAC 2014: Proceedings of the 5th International Particle Accelerator Conference
SP - 736
EP - 738
BT - IPAC 2014
PB - Joint Accelerator Conferences Website (JACoW)
T2 - 5th International Particle Accelerator Conference, IPAC 2014
Y2 - 15 June 2014 through 20 June 2014
ER -