Photoelectron emission microscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures

W. C. Yang, B. J. Rodriauez, M. Park, R. J. Nemanich, O. Ambacher, V. Cimalla

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

The inversion domain boundaries of GaN-based lateral polarity heterostructures were observed using photoelectron emission microscopy. It was shown that the emission threshold of the N-face region is lower than that of the Ga face. Bright emission was detected from regions around the inversion domain boundaries of the lateral polarity heterostructure.

Original languageEnglish (US)
Pages (from-to)5720-5725
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number9
DOIs
StatePublished - Nov 1 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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