Photoelectrochemical Properties of Semiconducting Cadmium Mercury Telluride Thin Films with Bandgaps Between 1.47 and 1.08 eV

M. Neumann-Spallart, G. Tamizhmani, C. Levy-Clement

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

Films of Cd-rich cadmium mercury telluride (CdxHg1-xTe, CMT) 0.1 to 2 µm thick were formed on conducting glass (Sn02) and cadmium substrates by electrochemical (potentiostatic) deposition from an aqueous bath. 1 - x ranged from 0 to 0.25. The photoresponse of CMT electrodes of n- and p-type was investigated in electrolytes containing different redox couples. In 1M polysulfide solution, the onset of photocurrents was found at −1.1V vs. SCE, independent of the optical bandgap. In the plateau range of the photocurrent potential curves, quantum yields of charge collection up to 0.45 were measured for Cd0.9Hg0.1Te. The long-wavelength onset of photoresponse varied with the bandgap (1.47–1.08 eV) for 1 - x between 0.01 and 0.2. The drawback of the small minority-carrier diffusion length of CMT grown by electrocrystallization can be circumvented with stacked, semitransparent thin-film electrodes. Experiments show that with such a configuration of thin CMT films grown on transparent substrates, the total photocurrent output can be increased considerably.

Original languageEnglish (US)
Pages (from-to)3434-3437
Number of pages4
JournalJournal of the Electrochemical Society
Volume137
Issue number11
DOIs
StatePublished - Nov 1990
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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