Photo-emission electron microscopy (PEEM) of cleaned and etched 6H-SiC(0001)

J. D. Hartman, K. Naniwae, C. Petrich, V. Ramachandran, R. M. Feenstra, Robert Nemanich, R. F. Davis

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

The surface structures of both cleaned and etched 6H-SiC(0001) Si wafers have been investigated using the photo emission electron microscope (PEEM). In the first study, the SiC wafers were exposed to two different cleaning processes to obtain a (√3×√3)R30° and a 3×3 reconstructed surface. The PEEM images were obtained with a mercury arc lamp as the photon source and revealed that the clean reconstructed surfaces were non-uniform. In the second study, characterization of a hydrogen etched surface using the PEEM with the Duke University free electron laser (DFEL) as the photon source revealed a high density of dislocations and a stepped surface structure.

Original languageEnglish (US)
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
StatePublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period10/10/9910/15/99

ASJC Scopus subject areas

  • Materials Science(all)

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