Abstract
The surface structures of both cleaned and etched 6H-SiC(0001) Si wafers have been investigated using the photo emission electron microscope (PEEM). In the first study, the SiC wafers were exposed to two different cleaning processes to obtain a (√3×√3)R30° and a 3×3 reconstructed surface. The PEEM images were obtained with a mercury arc lamp as the photon source and revealed that the clean reconstructed surfaces were non-uniform. In the second study, characterization of a hydrogen etched surface using the PEEM with the Duke University free electron laser (DFEL) as the photon source revealed a high density of dislocations and a stepped surface structure.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publ Ltd |
| Volume | 338 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
Other
| Other | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials |
|---|---|
| City | Research Triangle Park, NC, USA |
| Period | 10/10/99 → 10/15/99 |
ASJC Scopus subject areas
- General Materials Science