Phonons in epitaxially grown α-Sn1-xGex alloys

Jose Menendez, K. Sinha, H. Höchst, M. A. Engelhardt

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Abstract

We present a Raman scattering study of optical phonons in α-Sn 1-xGex alloys (x≤0.08) grown by molecular beam epitaxy on CdTe (100) substrates. The Raman spectra provide strong evidence for the growth of high quality films in the diamond-structure phase. The composition dependence of the Raman modes shows some qualitative differences with results from the isomorphic Ge1-xSix system. We show that these differences can be understood in terms of a simple model that considers confinement and strain effects.

Original languageEnglish (US)
Pages (from-to)380-382
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number4
DOIs
StatePublished - Dec 1 1990

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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