Phonons in epitaxially grown α-Sn1-xGex alloys

Jose Menendez; K. Sinha; H. Höchst; M. A. Engelhardt

doi:10.1063/1.103698

Phonons in epitaxially grown α-Sn_1-xGe_x alloys

Jose Menendez, K. Sinha, H. Höchst, M. A. Engelhardt

Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We present a Raman scattering study of optical phonons in α-Sn _1-xGe_x alloys (x≤0.08) grown by molecular beam epitaxy on CdTe (100) substrates. The Raman spectra provide strong evidence for the growth of high quality films in the diamond-structure phase. The composition dependence of the Raman modes shows some qualitative differences with results from the isomorphic Ge_1-xSi_x system. We show that these differences can be understood in terms of a simple model that considers confinement and strain effects.

Original language	English (US)
Pages (from-to)	380-382
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	4
DOIs	https://doi.org/10.1063/1.103698
State	Published - Dec 1 1990

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We present a Raman scattering study of optical phonons in α-Sn 1-xGex alloys (x≤0.08) grown by molecular beam epitaxy on CdTe (100) substrates. The Raman spectra provide strong evidence for the growth of high quality films in the diamond-structure phase. The composition dependence of the Raman modes shows some qualitative differences with results from the isomorphic Ge1-xSix system. We show that these differences can be understood in terms of a simple model that considers confinement and strain effects.",

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AU - Höchst, H.

AU - Engelhardt, M. A.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - We present a Raman scattering study of optical phonons in α-Sn 1-xGex alloys (x≤0.08) grown by molecular beam epitaxy on CdTe (100) substrates. The Raman spectra provide strong evidence for the growth of high quality films in the diamond-structure phase. The composition dependence of the Raman modes shows some qualitative differences with results from the isomorphic Ge1-xSix system. We show that these differences can be understood in terms of a simple model that considers confinement and strain effects.

AB - We present a Raman scattering study of optical phonons in α-Sn 1-xGex alloys (x≤0.08) grown by molecular beam epitaxy on CdTe (100) substrates. The Raman spectra provide strong evidence for the growth of high quality films in the diamond-structure phase. The composition dependence of the Raman modes shows some qualitative differences with results from the isomorphic Ge1-xSix system. We show that these differences can be understood in terms of a simple model that considers confinement and strain effects.

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Phonons in epitaxially grown α-Sn_1-xGe_x alloys

Abstract

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