Phonon-limited mobility modeling of gallium nitride nanowires

The focus of this paper is on the development of a low field electron mobility solver for modeling GaN nanowires using an Ensemble Monte Carlo technique. A 2D Schrödinger-Poisson solver and a 1D Monte Carlo solver are self-consistently coupled for this purpose. Three scattering mechanisms, acoustic phonon scattering, polar optical phonon scattering, and piezoelectric scattering, are considered to account for the electron phonon interactions in the system. Simulated phonon limited mobility of the nanowire matches the available experimental data.