Abstract

The focus of this paper is on the development of a low field electron mobility solver for modeling GaN nanowires using an Ensemble Monte Carlo technique. A 2D Schrödinger-Poisson solver and a 1D Monte Carlo solver are self-consistently coupled for this purpose. Three scattering mechanisms, acoustic phonon scattering, polar optical phonon scattering, and piezoelectric scattering, are considered to account for the electron phonon interactions in the system. Simulated phonon limited mobility of the nanowire matches the available experimental data.

Original languageEnglish (US)
Article number114301
JournalJournal of Applied Physics
Volume125
Issue number11
DOIs
StatePublished - Mar 21 2019

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gallium nitrides
nanowires
scattering
electron phonon interactions
electron mobility
acoustics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Phonon-limited mobility modeling of gallium nitride nanowires. / Kumar, Viswanathan Naveen; Vasileska, Dragica.

In: Journal of Applied Physics, Vol. 125, No. 11, 114301, 21.03.2019.

Research output: Contribution to journalArticle

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