TY - JOUR
T1 - Phonon Dissipation in Nanostructured Semiconductor Devices
T2 - Dispersing Heat Is Critical for Continued Integrated Circuit Progress
AU - Mohamed, Mohamed
AU - Raleva, Katerina
AU - Ravaioli, Umberto
AU - Vasileska, Dragica
AU - Aksamija, Zlatan
N1 - Publisher Copyright:
© 2007-2011 IEEE.
PY - 2019/8
Y1 - 2019/8
N2 - For many years, the computer industry has relied on steady progress in the exponential rate of scaling MOSFETs in integrated circuits. The usual expectation, based on Moore's law, is that the number of transistors able to be packed on a chip doubles roughly every 18 months. Sustaining this pace requires aggressive research into the numerous bottlenecks that threaten to slow it down. Much research has gone into the photolithography needed to produce such dense circuits, device structures that would allow smaller channel lengths, and a plethora of other materials and device advances that help sustain the present rate of scaling. In the past decade, however, another issue has emerged that threatens to impose an absolute limit on how many transistors can be packed onto a die. This is the issue of heat dissipation.
AB - For many years, the computer industry has relied on steady progress in the exponential rate of scaling MOSFETs in integrated circuits. The usual expectation, based on Moore's law, is that the number of transistors able to be packed on a chip doubles roughly every 18 months. Sustaining this pace requires aggressive research into the numerous bottlenecks that threaten to slow it down. Much research has gone into the photolithography needed to produce such dense circuits, device structures that would allow smaller channel lengths, and a plethora of other materials and device advances that help sustain the present rate of scaling. In the past decade, however, another issue has emerged that threatens to impose an absolute limit on how many transistors can be packed onto a die. This is the issue of heat dissipation.
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U2 - 10.1109/MNANO.2019.2916114
DO - 10.1109/MNANO.2019.2916114
M3 - Article
AN - SCOPUS:85067612750
SN - 1932-4510
VL - 13
SP - 6
EP - 17
JO - IEEE Nanotechnology Magazine
JF - IEEE Nanotechnology Magazine
IS - 4
M1 - 8734706
ER -