TY - JOUR
T1 - Phase transformation in FeSi2 nanowires
AU - Liang, S.
AU - Islam, R.
AU - Smith, David
AU - Bennett, Peter
N1 - Funding Information:
This work was supported by NSF NIRT Grant no. ECS-0304682. We acknowledge use of facilities in the John. M. Cowley Center for High Resolution Electron Microscopy.
PY - 2006/10/1
Y1 - 2006/10/1
N2 - We report the formation of β-FeSi2 nanowires (NWs) on Si(1 1 0), produced by annealing s-FeSi2 NWs at 800 °C. These two phases of iron silicide are semiconducting and metallic, respectively, in thin film form. The s-phase NWs are formed by reactive deposition at 700 °C and have average dimensions of 5 nm thick×8 nm wide×3 μm long. Both are endotaxial, meaning they grow into the substrate along inclined Si{1 1 1} planes. The transformation temperature is higher than observed in thin films, due to the small thickness and large interface area of the NWs, which stabilize the s-phase.
AB - We report the formation of β-FeSi2 nanowires (NWs) on Si(1 1 0), produced by annealing s-FeSi2 NWs at 800 °C. These two phases of iron silicide are semiconducting and metallic, respectively, in thin film form. The s-phase NWs are formed by reactive deposition at 700 °C and have average dimensions of 5 nm thick×8 nm wide×3 μm long. Both are endotaxial, meaning they grow into the substrate along inclined Si{1 1 1} planes. The transformation temperature is higher than observed in thin films, due to the small thickness and large interface area of the NWs, which stabilize the s-phase.
KW - A1. Epitaxy
KW - A1. Nanowires
KW - A1. Phase transformation
KW - B1. Nanomaterials
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U2 - 10.1016/j.jcrysgro.2006.05.076
DO - 10.1016/j.jcrysgro.2006.05.076
M3 - Article
AN - SCOPUS:33749013564
SN - 0022-0248
VL - 295
SP - 166
EP - 171
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2
ER -