Phase formations in Co/Si, Co/Ge, and Co/Si1-xGex by solid phase reactions

Z. Wang, Y. L. Chen, H. Ying, R. J. Nemanich, D. E. Sayers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

26 Scopus citations

Abstract

Phase formations in Co thin films (200angstrom in thickness) reacting with atomically clean Si(100), Ge(100), and Si0.80Ge0.20 epitaxial layer (800angstrom in thickness on Si(100) substrates) in UHV have been investigated. For the Co/Si system, it is found that CoSi (FeSi structure) is formed at 375°C through a very disordered CoSi phase, and the final CoSi2 phase is formed at 575°C. On the other hand, the Co5Ge7 phase was identified for the Co/Ge samples annealed at 300°C and 450°C and the final CoGe2 phase is formed at 600°C. For the Co/Si0.8Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with yapprox.0.10 were detected, and for annealing at 700°C, only the CoSi2 phase was formed. These results indicate a preferential Co-Si reaction when annealing the Co/SiGe structure. It was also found that the sheet resistance of the reacted thin films depend strongly on annealing temperature.

Original languageEnglish (US)
Title of host publicationSilicides, Germanides, and Their Interfaces
EditorsRobert W. Fathauer, Siegfried Mantl, Leo J. Schowalter, K.N. Tu
PublisherPubl by Materials Research Society
Pages397-402
Number of pages6
ISBN (Print)1558992197
StatePublished - Jan 1 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume320
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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