Phase formations in Co/Si, Co/Ge, and Co/Si1-xGex by solid phase reactions

Z. Wang; Y. L. Chen; H. Ying; R. J. Nemanich; D. E. Sayers

Phase formations in Co/Si, Co/Ge, and Co/Si_1-xGe_x by solid phase reactions

Z. Wang, Y. L. Chen, H. Ying, R. J. Nemanich, D. E. Sayers

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Phase formations in Co thin films (200angstrom in thickness) reacting with atomically clean Si(100), Ge(100), and Si_0.80Ge_0.20 epitaxial layer (800angstrom in thickness on Si(100) substrates) in UHV have been investigated. For the Co/Si system, it is found that CoSi (FeSi structure) is formed at 375°C through a very disordered CoSi phase, and the final CoSi₂ phase is formed at 575°C. On the other hand, the Co₅Ge₇ phase was identified for the Co/Ge samples annealed at 300°C and 450°C and the final CoGe₂ phase is formed at 600°C. For the Co/Si_0.8Ge_0.20 samples annealed from 400°C to 600°C, Co(Si_1-yGe_y) phases with yapprox.0.10 were detected, and for annealing at 700°C, only the CoSi₂ phase was formed. These results indicate a preferential Co-Si reaction when annealing the Co/SiGe structure. It was also found that the sheet resistance of the reacted thin films depend strongly on annealing temperature.

Original language	English (US)
Title of host publication	Silicides, Germanides, and Their Interfaces
Editors	Robert W. Fathauer, Siegfried Mantl, Leo J. Schowalter, K.N. Tu
Publisher	Publ by Materials Research Society
Pages	397-402
Number of pages	6
ISBN (Print)	1558992197
State	Published - Jan 1 1994
Externally published	Yes
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA Duration: Nov 29 1993 → Dec 2 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	320
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Fall Meeting of the Materials Research Society
City	Boston, MA, USA
Period	11/29/93 → 12/2/93

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Wang, Z., Chen, Y. L., Ying, H., Nemanich, R. J., & Sayers, D. E. (1994). Phase formations in Co/Si, Co/Ge, and Co/Si_1-xGe_x by solid phase reactions. In R. W. Fathauer, S. Mantl, L. J. Schowalter, & K. N. Tu (Eds.), Silicides, Germanides, and Their Interfaces (pp. 397-402). (Materials Research Society Symposium Proceedings; Vol. 320). Publ by Materials Research Society.

Phase formations in Co/Si, Co/Ge, and Co/Si_1-xGe_x by solid phase reactions. / Wang, Z.; Chen, Y. L.; Ying, H. et al.
Silicides, Germanides, and Their Interfaces. ed. / Robert W. Fathauer; Siegfried Mantl; Leo J. Schowalter; K.N. Tu. Publ by Materials Research Society, 1994. p. 397-402 (Materials Research Society Symposium Proceedings; Vol. 320).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wang, Z, Chen, YL, Ying, H, Nemanich, RJ & Sayers, DE 1994, Phase formations in Co/Si, Co/Ge, and Co/Si_1-xGe_x by solid phase reactions. in RW Fathauer, S Mantl, LJ Schowalter & KN Tu (eds), Silicides, Germanides, and Their Interfaces. Materials Research Society Symposium Proceedings, vol. 320, Publ by Materials Research Society, pp. 397-402, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.

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abstract = "Phase formations in Co thin films (200angstrom in thickness) reacting with atomically clean Si(100), Ge(100), and Si0.80Ge0.20 epitaxial layer (800angstrom in thickness on Si(100) substrates) in UHV have been investigated. For the Co/Si system, it is found that CoSi (FeSi structure) is formed at 375°C through a very disordered CoSi phase, and the final CoSi2 phase is formed at 575°C. On the other hand, the Co5Ge7 phase was identified for the Co/Ge samples annealed at 300°C and 450°C and the final CoGe2 phase is formed at 600°C. For the Co/Si0.8Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with yapprox.0.10 were detected, and for annealing at 700°C, only the CoSi2 phase was formed. These results indicate a preferential Co-Si reaction when annealing the Co/SiGe structure. It was also found that the sheet resistance of the reacted thin films depend strongly on annealing temperature.",

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AB - Phase formations in Co thin films (200angstrom in thickness) reacting with atomically clean Si(100), Ge(100), and Si0.80Ge0.20 epitaxial layer (800angstrom in thickness on Si(100) substrates) in UHV have been investigated. For the Co/Si system, it is found that CoSi (FeSi structure) is formed at 375°C through a very disordered CoSi phase, and the final CoSi2 phase is formed at 575°C. On the other hand, the Co5Ge7 phase was identified for the Co/Ge samples annealed at 300°C and 450°C and the final CoGe2 phase is formed at 600°C. For the Co/Si0.8Ge0.20 samples annealed from 400°C to 600°C, Co(Si1-yGey) phases with yapprox.0.10 were detected, and for annealing at 700°C, only the CoSi2 phase was formed. These results indicate a preferential Co-Si reaction when annealing the Co/SiGe structure. It was also found that the sheet resistance of the reacted thin films depend strongly on annealing temperature.

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