Phase-formation diagram for precursors to epitaxial growth of NiSi2 on Si(111)

Peter Bennett, A. P. Johnson, B. N. Halawith

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.

Original languageEnglish (US)
Pages (from-to)4268-4271
Number of pages4
JournalPhysical Review B
Volume37
Issue number8
DOIs
StatePublished - 1988

Fingerprint

Epitaxial growth
diagrams
Annealing
Reflection high energy electron diffraction
annealing
Microanalysis
Ultrahigh vacuum
Nickel
microanalysis
high energy electrons
ultrahigh vacuum
Masks
Electron microscopes
masks
electron diffraction
electron microscopes
nickel
Scanning
cycles
scanning

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Phase-formation diagram for precursors to epitaxial growth of NiSi2 on Si(111). / Bennett, Peter; Johnson, A. P.; Halawith, B. N.

In: Physical Review B, Vol. 37, No. 8, 1988, p. 4268-4271.

Research output: Contribution to journalArticle

Bennett, Peter ; Johnson, A. P. ; Halawith, B. N. / Phase-formation diagram for precursors to epitaxial growth of NiSi2 on Si(111). In: Physical Review B. 1988 ; Vol. 37, No. 8. pp. 4268-4271.
@article{7c3592a5e8384aed86d8ba7be211c710,
title = "Phase-formation diagram for precursors to epitaxial growth of NiSi2 on Si(111)",
abstract = "Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.",
author = "Peter Bennett and Johnson, {A. P.} and Halawith, {B. N.}",
year = "1988",
doi = "10.1103/PhysRevB.37.4268",
language = "English (US)",
volume = "37",
pages = "4268--4271",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Phase-formation diagram for precursors to epitaxial growth of NiSi2 on Si(111)

AU - Bennett, Peter

AU - Johnson, A. P.

AU - Halawith, B. N.

PY - 1988

Y1 - 1988

N2 - Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.

AB - Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.

UR - http://www.scopus.com/inward/record.url?scp=0009603702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009603702&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.37.4268

DO - 10.1103/PhysRevB.37.4268

M3 - Article

AN - SCOPUS:0009603702

VL - 37

SP - 4268

EP - 4271

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 8

ER -