Abstract
Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.
Original language | English (US) |
---|---|
Pages (from-to) | 4268-4271 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 37 |
Issue number | 8 |
DOIs | |
State | Published - 1988 |
ASJC Scopus subject areas
- Condensed Matter Physics