Abstract
Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4268-4271 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 37 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1988 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Phase-formation diagram for precursors to epitaxial growth of NiSi2 on Si(111). / Bennett, Peter; Johnson, A. P.; Halawith, B. N.
In: Physical Review B, Vol. 37, No. 8, 1988, p. 4268-4271.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phase-formation diagram for precursors to epitaxial growth of NiSi2 on Si(111)
AU - Bennett, Peter
AU - Johnson, A. P.
AU - Halawith, B. N.
PY - 1988
Y1 - 1988
N2 - Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.
AB - Using reflection high-energy electron diffraction and Auger microanalysis in a custom-built ultrahigh vacuum scanning electron microscope we have identified six ordered structures that precede epitaxial NiSi2 during the annealing of nickel overlayers on Si(111). A novel technique of depositing through holes in a mask positioned near the sample allows us to obtain the complete coverage dependence of these structures in a single annealing cycle. The role of these structures in relation to the NiSi2 (B) (twinned) and NiSi2 (A) (nontwinned) structures is described.
UR - http://www.scopus.com/inward/record.url?scp=0009603702&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0009603702&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.37.4268
DO - 10.1103/PhysRevB.37.4268
M3 - Article
AN - SCOPUS:0009603702
VL - 37
SP - 4268
EP - 4271
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 8
ER -