Phase breaking of trapped electrons in a gated quantum dot

N. Sasaki, Y. Ohkubo, Y. Ochiai, K. Ishibashi, J. P. Bird, Y. Aoyagi, T. Sugano, D. K. Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

We have observed conductance fluctuations due to electron interference in a split-gate quantum dot, fabricated in the two-dimensional electron gas of a GaAs/AlxGa1-xAs heterojunction. We have determined the phase breaking time of electrons by two independent analyses, using the correlation field and the amplitude of the fluctuations. Phase breaking times obtained by these distinct approaches are found to differ from each other by a factor of six.

Original languageEnglish (US)
Pages (from-to)69-74
Number of pages6
JournalSuperlattices and Microstructures
Volume22
Issue number1
DOIs
StatePublished - Jul 1997

Keywords

  • Conductance fluctuations
  • GaAs/AlGaAs
  • Phase breaking time

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Sasaki, N., Ohkubo, Y., Ochiai, Y., Ishibashi, K., Bird, J. P., Aoyagi, Y., Sugano, T., & Ferry, D. K. (1997). Phase breaking of trapped electrons in a gated quantum dot. Superlattices and Microstructures, 22(1), 69-74. https://doi.org/10.1006/spmi.1996.0264