3 Scopus citations

Abstract

We investigate the potential advantages of using very high resistivity n- and p-type, to manufacture high performance solar cells. Analytical modeling indicates that high resistivity substrates (10 Ωcm - >1k Ωcm) are required to have bulk Shockley-Read-Hall lifetimes in the millisecond range to outperform wafers with standard resistivities (< 10 Ωcm). Additionally, for resistivities over 10 Ω.cm, efficiencies show to be weakly dependent of the bulk resistivity. These results if experimental verified, can lead to more affordable ingot manufacturing, by lessening the requirements of dopants homogeneity along the ingot. We successfully passivated both n- and p- type substrates using i-a-Si:H, obtaining surface saturation current densities below 10 fAcm-2 and effective minority-carrier lifetimes over 2 ms at maximum power over the entire range of bulk resistivities (3 Ωcm- >10k Ωcm).

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages300-303
Number of pages4
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
Country/TerritoryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • amorphous materials
  • charge carrier lifetime
  • doping
  • photovoltaic cells
  • silicon

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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