Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Jianping Liu, Yun Zhang, Zachary Lochner, Seong Soo Kim, Hyunsoo Kim, Jae Hyun Ryou, Shyh Chiang Shen, P. Doug Yoder, Russell D. Dupuis, Qiyuan Wei, Kewei Sun, Alec Fischer, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Blue laser diode (LD) structures with GaN waveguide layers and with In 0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices V
DOIs
StatePublished - 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7602
ISSN (Print)0277-786X

Other

OtherGallium Nitride Materials and Devices V
CountryUnited States
CitySan Francisco, CA
Period1/25/101/28/10

Keywords

  • InGaN waveguide layers
  • Laser diodes
  • Metalorganic chemical vapor deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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