Performance improvement of InGaN-based laser diodes by epitaxial layer structure design

Jianping Liu, Yun Zhang, Zachary Lochner, Seong Soo Kim, Hyunsoo Kim, Jae Hyun Ryou, Shyh Chiang Shen, P. Doug Yoder, Russell D. Dupuis, Qiyuan Wei, Kewei Sun, Alec Fischer, Fernando Ponce

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Blue laser diode (LD) structures with GaN waveguide layers and with In 0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume7602
DOIs
StatePublished - 2010
EventGallium Nitride Materials and Devices V - San Francisco, CA, United States
Duration: Jan 25 2010Jan 28 2010

Other

OtherGallium Nitride Materials and Devices V
CountryUnited States
CitySan Francisco, CA
Period1/25/101/28/10

Fingerprint

InGaN
Epitaxial layers
Laser Diode
Waveguide
Semiconductor lasers
Waveguides
semiconductor lasers
waveguides
Cathodoluminescence
cathodoluminescence
X-ray Diffraction
lasing
X ray diffraction
Design
room temperature
diffraction
x rays
Temperature

Keywords

  • InGaN waveguide layers
  • Laser diodes
  • Metalorganic chemical vapor deposition

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Liu, J., Zhang, Y., Lochner, Z., Kim, S. S., Kim, H., Ryou, J. H., ... Ponce, F. (2010). Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7602). [760219] https://doi.org/10.1117/12.842334

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. / Liu, Jianping; Zhang, Yun; Lochner, Zachary; Kim, Seong Soo; Kim, Hyunsoo; Ryou, Jae Hyun; Shen, Shyh Chiang; Yoder, P. Doug; Dupuis, Russell D.; Wei, Qiyuan; Sun, Kewei; Fischer, Alec; Ponce, Fernando.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7602 2010. 760219.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, J, Zhang, Y, Lochner, Z, Kim, SS, Kim, H, Ryou, JH, Shen, SC, Yoder, PD, Dupuis, RD, Wei, Q, Sun, K, Fischer, A & Ponce, F 2010, Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 7602, 760219, Gallium Nitride Materials and Devices V, San Francisco, CA, United States, 1/25/10. https://doi.org/10.1117/12.842334
Liu J, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH et al. Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7602. 2010. 760219 https://doi.org/10.1117/12.842334
Liu, Jianping ; Zhang, Yun ; Lochner, Zachary ; Kim, Seong Soo ; Kim, Hyunsoo ; Ryou, Jae Hyun ; Shen, Shyh Chiang ; Yoder, P. Doug ; Dupuis, Russell D. ; Wei, Qiyuan ; Sun, Kewei ; Fischer, Alec ; Ponce, Fernando. / Performance improvement of InGaN-based laser diodes by epitaxial layer structure design. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 7602 2010.
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abstract = "Blue laser diode (LD) structures with GaN waveguide layers and with In 0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.",
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