Performance and reproducibility enhancement of HgCdTe molecular beam epitaxy growth on CdZnTe substrates using interfacial HgTeCdTe superlattice layers

Yong Chang, Jun Zhao, Hisham Abad, Christoph H. Grein, Sivalingam Sivananthan, Toshihiro Aoki, David Smith

Research output: Contribution to journalArticle

23 Scopus citations

Abstract

Interfacial layers including HgTeCdTe superlattices (SLs) were introduced during the molecular-beam epitaxy growth of HgCdTe on CdZnTe (211)B substrates. Transmission-electron-microscopic observations show that the SLs smooth out the substrates' surface roughness during growth, and can also bend or block threading dislocations in a way that prevents their propagation from the substrate into the functional HgCdTe epilayers. An average etch pit density value in the low- 105 cm-2 range was reproducibly achieved in long wavelength HgCdTe samples, with the best value being 4× 104 cm-2. Photoconductive decay lifetime measurements give values approaching theoretical limits, as determined by the intrinsic radiative and Auger recombination mechanisms. The use of such interfacial layers thus leads to enhanced growth yields and material properties.

Original languageEnglish (US)
Article number131924
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
StatePublished - Mar 28 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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