Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100)

Y. Y. Fang, J. Tolle, R. Roucka, Andrew Chizmeshya, John Kouvetakis, V. R. D'Costa, Jose Menendez

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Abstract

High-quality, tensile-strained Ge layers with variable thickness (>30 nm) have been deposited at low temperature (350-380 °C) on Si(100) via fully relaxed Ge1-y Sny buffers. The precise strain state of the epilayers is controlled by varying the Sn content of the buffer, yielding tunable tensile strains up to 0.25% for y=0.025. Combined Raman analysis and high resolution x-ray diffraction using multiple off-axis reflections reveal unequivocally that the symmetry of tensile Ge is perfectly tetragonal, while the strain state of the buffer (∼200 nm thick) remains essentially unchanged. A downshift of the direct gap consistent with tensile strain has been observed.

Original languageEnglish (US)
Article number061915
JournalApplied Physics Letters
Volume90
Issue number6
DOIs
Publication statusPublished - 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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