Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100)

Y. Y. Fang, J. Tolle, R. Roucka, Andrew Chizmeshya, John Kouvetakis, V. R. D'Costa, Jose Menendez

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

High-quality, tensile-strained Ge layers with variable thickness (>30 nm) have been deposited at low temperature (350-380 °C) on Si(100) via fully relaxed Ge1-y Sny buffers. The precise strain state of the epilayers is controlled by varying the Sn content of the buffer, yielding tunable tensile strains up to 0.25% for y=0.025. Combined Raman analysis and high resolution x-ray diffraction using multiple off-axis reflections reveal unequivocally that the symmetry of tensile Ge is perfectly tetragonal, while the strain state of the buffer (∼200 nm thick) remains essentially unchanged. A downshift of the direct gap consistent with tensile strain has been observed.

Original languageEnglish (US)
Article number061915
JournalApplied Physics Letters
Volume90
Issue number6
DOIs
StatePublished - 2007

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buffers
x ray diffraction
high resolution
symmetry

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100). / Fang, Y. Y.; Tolle, J.; Roucka, R.; Chizmeshya, Andrew; Kouvetakis, John; D'Costa, V. R.; Menendez, Jose.

In: Applied Physics Letters, Vol. 90, No. 6, 061915, 2007.

Research output: Contribution to journalArticle

@article{ee9616e1c4a04be283fcd4f40bed8d33,
title = "Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100)",
abstract = "High-quality, tensile-strained Ge layers with variable thickness (>30 nm) have been deposited at low temperature (350-380 °C) on Si(100) via fully relaxed Ge1-y Sny buffers. The precise strain state of the epilayers is controlled by varying the Sn content of the buffer, yielding tunable tensile strains up to 0.25{\%} for y=0.025. Combined Raman analysis and high resolution x-ray diffraction using multiple off-axis reflections reveal unequivocally that the symmetry of tensile Ge is perfectly tetragonal, while the strain state of the buffer (∼200 nm thick) remains essentially unchanged. A downshift of the direct gap consistent with tensile strain has been observed.",
author = "Fang, {Y. Y.} and J. Tolle and R. Roucka and Andrew Chizmeshya and John Kouvetakis and D'Costa, {V. R.} and Jose Menendez",
year = "2007",
doi = "10.1063/1.2472273",
language = "English (US)",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100)

AU - Fang, Y. Y.

AU - Tolle, J.

AU - Roucka, R.

AU - Chizmeshya, Andrew

AU - Kouvetakis, John

AU - D'Costa, V. R.

AU - Menendez, Jose

PY - 2007

Y1 - 2007

N2 - High-quality, tensile-strained Ge layers with variable thickness (>30 nm) have been deposited at low temperature (350-380 °C) on Si(100) via fully relaxed Ge1-y Sny buffers. The precise strain state of the epilayers is controlled by varying the Sn content of the buffer, yielding tunable tensile strains up to 0.25% for y=0.025. Combined Raman analysis and high resolution x-ray diffraction using multiple off-axis reflections reveal unequivocally that the symmetry of tensile Ge is perfectly tetragonal, while the strain state of the buffer (∼200 nm thick) remains essentially unchanged. A downshift of the direct gap consistent with tensile strain has been observed.

AB - High-quality, tensile-strained Ge layers with variable thickness (>30 nm) have been deposited at low temperature (350-380 °C) on Si(100) via fully relaxed Ge1-y Sny buffers. The precise strain state of the epilayers is controlled by varying the Sn content of the buffer, yielding tunable tensile strains up to 0.25% for y=0.025. Combined Raman analysis and high resolution x-ray diffraction using multiple off-axis reflections reveal unequivocally that the symmetry of tensile Ge is perfectly tetragonal, while the strain state of the buffer (∼200 nm thick) remains essentially unchanged. A downshift of the direct gap consistent with tensile strain has been observed.

UR - http://www.scopus.com/inward/record.url?scp=33846991238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846991238&partnerID=8YFLogxK

U2 - 10.1063/1.2472273

DO - 10.1063/1.2472273

M3 - Article

AN - SCOPUS:33846991238

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 061915

ER -