Abstract
A process for the patterned self-assembly of nanometer-scale particles within a solid is described. The process uses crystal strain and composition to guide the formation of arsenic precipitates in GaAs-based epitaxial layers grown at low temperature by molecular beam epitaxy. The lateral particle position is controlled by the strain produced by a surface stress structure while the vertical position is controlled by the epitaxial layer composition. Arsenic particles ∼16-nm in diameter are fabricated in one-dimensional arrays with a 23-nm edge-to-edge particle spacing at a depth of 45 nm below stressors 200 nm in width, thereby demonstrating this technique.
Original language | English (US) |
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Pages (from-to) | 478-480 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 68 |
Issue number | 4 |
DOIs | |
State | Published - 1996 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)