Patterned self-assembly of one-dimensional arsenic particle arrays in GaAs by controlled precipitation

Richard Kiehl, M. Yamaguchi, O. Ueda, N. Horiguchi, N. Yokoyama

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A process for the patterned self-assembly of nanometer-scale particles within a solid is described. The process uses crystal strain and composition to guide the formation of arsenic precipitates in GaAs-based epitaxial layers grown at low temperature by molecular beam epitaxy. The lateral particle position is controlled by the strain produced by a surface stress structure while the vertical position is controlled by the epitaxial layer composition. Arsenic particles ∼16-nm in diameter are fabricated in one-dimensional arrays with a 23-nm edge-to-edge particle spacing at a depth of 45 nm below stressors 200 nm in width, thereby demonstrating this technique.

Original languageEnglish (US)
Pages (from-to)478
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1995
Externally publishedYes

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arsenic
self assembly
precipitates
molecular beam epitaxy
spacing
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Patterned self-assembly of one-dimensional arsenic particle arrays in GaAs by controlled precipitation. / Kiehl, Richard; Yamaguchi, M.; Ueda, O.; Horiguchi, N.; Yokoyama, N.

In: Applied Physics Letters, 1995, p. 478.

Research output: Contribution to journalArticle

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