@inproceedings{f5ddaa61828d419dbeb7d26d9deaec91,
title = "Passivation of Si(100) surface by S from a solution and its effect on Schottky barrier height",
abstract = "A wet-chemical process has been developed to passivate the S i(100) surface with S in an aqueous solution. The solution contains an etchant for SiO2, ammonium hydroxide [NH 4OH], and a passivant, ammonium sulfide [(NH4) 2S]. The compatibility of the etchant with the passivant allows SiO2, native or thermal, to be removed in-situ. A fresh and clean Si(100) surface is exposed right before the surface is passivated by S. To monitor the passivation quality, Schottky barrier heights of Al and Ni on S-passivated n-type and p-type Si(100) have been measured. Due to the passivation of dangling bonds by S, surface states are reduced to a great extent and Schottky barrier heights of Al and Ni on Si(100) show a greater sensitivity to their respective work functions. Our experimental results also reveal that surface states dominate over surface dipole in controlling the Schottky barrier height in these metal-Si systems.",
author = "Ali, {Muhammad Yusuf} and Meng Tao",
year = "2007",
doi = "10.1149/1.2731218",
language = "English (US)",
isbn = "9781566775519",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "489--497",
booktitle = "ECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface",
edition = "2",
note = "46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting ; Conference date: 06-05-2007 Through 10-05-2007",
}