Passivation of Si(100) surface by S from a solution and its effect on Schottky barrier height

Muhammad Yusuf Ali, Meng Tao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

A wet-chemical process has been developed to passivate the S i(100) surface with S in an aqueous solution. The solution contains an etchant for SiO2, ammonium hydroxide [NH 4OH], and a passivant, ammonium sulfide [(NH4) 2S]. The compatibility of the etchant with the passivant allows SiO2, native or thermal, to be removed in-situ. A fresh and clean Si(100) surface is exposed right before the surface is passivated by S. To monitor the passivation quality, Schottky barrier heights of Al and Ni on S-passivated n-type and p-type Si(100) have been measured. Due to the passivation of dangling bonds by S, surface states are reduced to a great extent and Schottky barrier heights of Al and Ni on Si(100) show a greater sensitivity to their respective work functions. Our experimental results also reveal that surface states dominate over surface dipole in controlling the Schottky barrier height in these metal-Si systems.

Original languageEnglish (US)
Title of host publicationECS Transactions - 46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface
PublisherElectrochemical Society Inc.
Pages489-497
Number of pages9
Edition2
ISBN (Print)9781566775519
DOIs
StatePublished - Jan 1 2007
Externally publishedYes
Event46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting - Chicago, IL, United States
Duration: May 6 2007May 10 2007

Publication series

NameECS Transactions
Number2
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other46th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLVI) and the 2nd International Symposium on Processes at the Semiconductor-Solution Interface - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period5/6/075/10/07

ASJC Scopus subject areas

  • Engineering(all)

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