Abstract
For the first time, a novel passivation method for 1.7 eV bandgap polycrystalline GaInP is discussed theoretically and demonstrated experimentally. Post-growth deposition of aluminum and annealing treatment is used to passivate the GaInP thin-films. The proposed passivation technique is predicted to form a type-I heterostructure at the surface and at the grain boundaries. Dependence of the photoluminescence spectrum of polycrystalline GaInP alloys on annealing temperature and time is reported. A 210-fold increase of photoluminescence peak intensity after post-anneal treatment suggests significant recombination reduction of surface and grain boundaries.
| Original language | English (US) |
|---|---|
| Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 196-200 |
| Number of pages | 5 |
| ISBN (Electronic) | 9781538685297 |
| DOIs | |
| State | Published - Nov 26 2018 |
| Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018 |
Other
| Other | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
|---|---|
| Country | United States |
| City | Waikoloa Village |
| Period | 6/10/18 → 6/15/18 |
Fingerprint
Keywords
- 1.7 eV bandgap
- GaInP
- passivation
- polycrystalline
- tandem cells
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate. / Chikhalkar, Abhinav; Zhang, Chaomin; Faleev, Nikolai; Honsberg, Christiana; King, Richard.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 196-200 8547733.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate
AU - Chikhalkar, Abhinav
AU - Zhang, Chaomin
AU - Faleev, Nikolai
AU - Honsberg, Christiana
AU - King, Richard
PY - 2018/11/26
Y1 - 2018/11/26
N2 - For the first time, a novel passivation method for 1.7 eV bandgap polycrystalline GaInP is discussed theoretically and demonstrated experimentally. Post-growth deposition of aluminum and annealing treatment is used to passivate the GaInP thin-films. The proposed passivation technique is predicted to form a type-I heterostructure at the surface and at the grain boundaries. Dependence of the photoluminescence spectrum of polycrystalline GaInP alloys on annealing temperature and time is reported. A 210-fold increase of photoluminescence peak intensity after post-anneal treatment suggests significant recombination reduction of surface and grain boundaries.
AB - For the first time, a novel passivation method for 1.7 eV bandgap polycrystalline GaInP is discussed theoretically and demonstrated experimentally. Post-growth deposition of aluminum and annealing treatment is used to passivate the GaInP thin-films. The proposed passivation technique is predicted to form a type-I heterostructure at the surface and at the grain boundaries. Dependence of the photoluminescence spectrum of polycrystalline GaInP alloys on annealing temperature and time is reported. A 210-fold increase of photoluminescence peak intensity after post-anneal treatment suggests significant recombination reduction of surface and grain boundaries.
KW - 1.7 eV bandgap
KW - GaInP
KW - passivation
KW - polycrystalline
KW - tandem cells
UR - http://www.scopus.com/inward/record.url?scp=85059885530&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059885530&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8547733
DO - 10.1109/PVSC.2018.8547733
M3 - Conference contribution
AN - SCOPUS:85059885530
SP - 196
EP - 200
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
ER -