Abstract

For the first time, a novel passivation method for 1.7 eV bandgap polycrystalline GaInP is discussed theoretically and demonstrated experimentally. Post-growth deposition of aluminum and annealing treatment is used to passivate the GaInP thin-films. The proposed passivation technique is predicted to form a type-I heterostructure at the surface and at the grain boundaries. Dependence of the photoluminescence spectrum of polycrystalline GaInP alloys on annealing temperature and time is reported. A 210-fold increase of photoluminescence peak intensity after post-anneal treatment suggests significant recombination reduction of surface and grain boundaries.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages196-200
Number of pages5
ISBN (Electronic)9781538685297
DOIs
StatePublished - Nov 26 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018

Other

Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
CountryUnited States
CityWaikoloa Village
Period6/10/186/15/18

Fingerprint

Passivation
Photoluminescence
Grain boundaries
Energy gap
Annealing
Aluminum
Heterojunctions
Thin films
Temperature

Keywords

  • 1.7 eV bandgap
  • GaInP
  • passivation
  • polycrystalline
  • tandem cells

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chikhalkar, A., Zhang, C., Faleev, N., Honsberg, C., & King, R. (2018). Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 196-200). [8547733] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8547733

Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate. / Chikhalkar, Abhinav; Zhang, Chaomin; Faleev, Nikolai; Honsberg, Christiana; King, Richard.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 196-200 8547733.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chikhalkar, A, Zhang, C, Faleev, N, Honsberg, C & King, R 2018, Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8547733, Institute of Electrical and Electronics Engineers Inc., pp. 196-200, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8547733
Chikhalkar A, Zhang C, Faleev N, Honsberg C, King R. Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 196-200. 8547733 https://doi.org/10.1109/PVSC.2018.8547733
Chikhalkar, Abhinav ; Zhang, Chaomin ; Faleev, Nikolai ; Honsberg, Christiana ; King, Richard. / Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 196-200
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