Passivation of polycrystalline Ga0.37In0.63P - An emerging 1.7eV bandgap top cell candidate

Abhinav Chikhalkar, Chaomin Zhang, Nikolai Faleev, Christiana Honsberg, Richard King

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


For the first time, a novel passivation method for 1.7 eV bandgap polycrystalline GaInP is discussed theoretically and demonstrated experimentally. Post-growth deposition of aluminum and annealing treatment is used to passivate the GaInP thin-films. The proposed passivation technique is predicted to form a type-I heterostructure at the surface and at the grain boundaries. Dependence of the photoluminescence spectrum of polycrystalline GaInP alloys on annealing temperature and time is reported. A 210-fold increase of photoluminescence peak intensity after post-anneal treatment suggests significant recombination reduction of surface and grain boundaries.

Original languageEnglish (US)
Title of host publication2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781538685297
StatePublished - Nov 26 2018
Event7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States
Duration: Jun 10 2018Jun 15 2018


Other7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/TerritoryUnited States
CityWaikoloa Village


  • 1.7 eV bandgap
  • GaInP
  • passivation
  • polycrystalline
  • tandem cells

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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