Abstract
For the first time, a novel passivation method for 1.7 eV bandgap polycrystalline GaInP is discussed theoretically and demonstrated experimentally. Post-growth deposition of aluminum and annealing treatment is used to passivate the GaInP thin-films. The proposed passivation technique is predicted to form a type-I heterostructure at the surface and at the grain boundaries. Dependence of the photoluminescence spectrum of polycrystalline GaInP alloys on annealing temperature and time is reported. A 210-fold increase of photoluminescence peak intensity after post-anneal treatment suggests significant recombination reduction of surface and grain boundaries.
Original language | English (US) |
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Title of host publication | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 196-200 |
Number of pages | 5 |
ISBN (Electronic) | 9781538685297 |
DOIs | |
State | Published - Nov 26 2018 |
Event | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018 |
Other
Other | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Country/Territory | United States |
City | Waikoloa Village |
Period | 6/10/18 → 6/15/18 |
Keywords
- 1.7 eV bandgap
- GaInP
- passivation
- polycrystalline
- tandem cells
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Renewable Energy, Sustainability and the Environment
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials