Passivation of Cu via refractory metal nitridation in an ammonia ambient

Daniel Adams; Terry Alford; N. D. Theodore; S. W. Russell; R. L. Spreitzera; J. W. Mayer

doi:10.1016/0040-6090(94)05805-9

Passivation of Cu via refractory metal nitridation in an ammonia ambient

Daniel Adams, Terry Alford, N. D. Theodore, S. W. Russell, R. L. Spreitzera, J. W. Mayer

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Cu-(27at.% Ti) and Cu-(26at.% Cr) alloys codeposited on silicon dioxide substrates were isochronally annealed for 30 min at 400-700 °C in a flowing NH₃ ambient. In the Cu-Ti alloy, Ti segregates to the free surface to form a TiN_x(O) layer and also to the alloy-SiO₂ interface to form a Ti₅ Si₃ TiO_w bilayer structure. Therefore the resulting structure is an almost completely dealloyed Cu layer located between a surface oxygen-rich Ti nitride and Ti-silicide/Ti-oxide bilayer interfacial structure. In the Cu-Cr alloy system, Cr seems to migrate only to the free surface to form a CrN_x passivation layer. A 45 nm Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. The Cr-nitride diffusion barrier is stable up to 600 °C compared with Ti nitride that fails at 500 °C. The Cu-Cr nitrided samples also showed an overall lower sheet resistance.

Original language	English (US)
Pages (from-to)	199-208
Number of pages	10
Journal	Thin Solid Films
Volume	262
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(94)05805-9
State	Published - Jun 15 1995

Keywords

Ammonia
Diffusion
Titanium nitride
Titanium oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/0040-6090(94)05805-9

Cite this

@article{df45fcf7dc634695a76088f4ea54c3a6,

title = "Passivation of Cu via refractory metal nitridation in an ammonia ambient",

abstract = "Cu-(27at.% Ti) and Cu-(26at.% Cr) alloys codeposited on silicon dioxide substrates were isochronally annealed for 30 min at 400-700 °C in a flowing NH3 ambient. In the Cu-Ti alloy, Ti segregates to the free surface to form a TiNx(O) layer and also to the alloy-SiO2 interface to form a Ti5 Si3 TiOw bilayer structure. Therefore the resulting structure is an almost completely dealloyed Cu layer located between a surface oxygen-rich Ti nitride and Ti-silicide/Ti-oxide bilayer interfacial structure. In the Cu-Cr alloy system, Cr seems to migrate only to the free surface to form a CrNx passivation layer. A 45 nm Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. The Cr-nitride diffusion barrier is stable up to 600 °C compared with Ti nitride that fails at 500 °C. The Cu-Cr nitrided samples also showed an overall lower sheet resistance.",

keywords = "Ammonia, Diffusion, Titanium nitride, Titanium oxide",

author = "Daniel Adams and Terry Alford and Theodore, {N. D.} and Russell, {S. W.} and Spreitzera, {R. L.} and Mayer, {J. W.}",

note = "Funding Information: The authorsw ould like to thank Harland Tompkins (Motorola, Mesa, AZ) for the AES analysis and Moon J. Kim (center for high resolution electron microscopy, Arizona State University) for assistance with the cross-sectionT EM analysisW. e also acknowledge the financial support provided by the National Science Foundation (L. Hess, DMR-9307662,a nd L. Salmon, ECS-9410399).",

year = "1995",

month = jun,

day = "15",

doi = "10.1016/0040-6090(94)05805-9",

language = "English (US)",

volume = "262",

pages = "199--208",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Passivation of Cu via refractory metal nitridation in an ammonia ambient

AU - Adams, Daniel

AU - Alford, Terry

AU - Theodore, N. D.

AU - Russell, S. W.

AU - Spreitzera, R. L.

AU - Mayer, J. W.

N1 - Funding Information: The authorsw ould like to thank Harland Tompkins (Motorola, Mesa, AZ) for the AES analysis and Moon J. Kim (center for high resolution electron microscopy, Arizona State University) for assistance with the cross-sectionT EM analysisW. e also acknowledge the financial support provided by the National Science Foundation (L. Hess, DMR-9307662,a nd L. Salmon, ECS-9410399).

PY - 1995/6/15

Y1 - 1995/6/15

N2 - Cu-(27at.% Ti) and Cu-(26at.% Cr) alloys codeposited on silicon dioxide substrates were isochronally annealed for 30 min at 400-700 °C in a flowing NH3 ambient. In the Cu-Ti alloy, Ti segregates to the free surface to form a TiNx(O) layer and also to the alloy-SiO2 interface to form a Ti5 Si3 TiOw bilayer structure. Therefore the resulting structure is an almost completely dealloyed Cu layer located between a surface oxygen-rich Ti nitride and Ti-silicide/Ti-oxide bilayer interfacial structure. In the Cu-Cr alloy system, Cr seems to migrate only to the free surface to form a CrNx passivation layer. A 45 nm Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. The Cr-nitride diffusion barrier is stable up to 600 °C compared with Ti nitride that fails at 500 °C. The Cu-Cr nitrided samples also showed an overall lower sheet resistance.

AB - Cu-(27at.% Ti) and Cu-(26at.% Cr) alloys codeposited on silicon dioxide substrates were isochronally annealed for 30 min at 400-700 °C in a flowing NH3 ambient. In the Cu-Ti alloy, Ti segregates to the free surface to form a TiNx(O) layer and also to the alloy-SiO2 interface to form a Ti5 Si3 TiOw bilayer structure. Therefore the resulting structure is an almost completely dealloyed Cu layer located between a surface oxygen-rich Ti nitride and Ti-silicide/Ti-oxide bilayer interfacial structure. In the Cu-Cr alloy system, Cr seems to migrate only to the free surface to form a CrNx passivation layer. A 45 nm Al film was deposited after nitridation, whereupon a second anneal was performed to evaluate these nitride layers as diffusion barriers. The Cr-nitride diffusion barrier is stable up to 600 °C compared with Ti nitride that fails at 500 °C. The Cu-Cr nitrided samples also showed an overall lower sheet resistance.

KW - Ammonia

KW - Diffusion

KW - Titanium nitride

KW - Titanium oxide

UR - http://www.scopus.com/inward/record.url?scp=0029327606&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029327606&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(94)05805-9

DO - 10.1016/0040-6090(94)05805-9

M3 - Article

AN - SCOPUS:0029327606

SN - 0040-6090

VL - 262

SP - 199

EP - 208

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Passivation of Cu via refractory metal nitridation in an ammonia ambient

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this